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參數(shù)資料
| 型號(hào)： | NTE2562 |
| 廠(chǎng)商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors High Current Switch |
| 中文描述： | 硅晶體管互補(bǔ)大電流開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 22K |
| 代理商： | NTE2562 |
NTE2562 (NPN) & NTE2563 (PNP)
Silicon Complementary Transistors
High Current Switch
Description:
The NTE2562 (NPN) and NTE2563 (PNP) are silicon complementary transistors is a TO220 type
package designed for use as a high current switch. Typical application include relay drivers, high–
speed inverters, converters, etc.
Features:
Low Collector–Emitter Saturation Voltage
High Current Capacity
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V
30V
6V
12A
20A
2W
25W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
I
EBO
h
FE
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 6A
V
CE
= 5V, I
C
= 1A
–
–
0.1
mA
Emitter Cutoff Current
–
–
0.1
mA
DC Current Gain
100
–
200
30
–
–
Current Gain–Bandwidth Product
f
T
–
120
–
MHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE2563 | 制造商:NTE Electronics 功能描述: |
| NTE2564 | 制造商:NTE 制造商全稱(chēng):NTE Electronics 功能描述:Complementary Silicon Transistors High Current Switch |
| NTE2565 | 制造商:NTE Electronics 功能描述: |
| NTE2566 | 制造商:NTE 制造商全稱(chēng):NTE Electronics 功能描述:Silicon Complementary Transistors High Current, High Speed Switch |
| NTE2567 | 制造商:NTE Electronics 功能描述:TRANSISTOR PNP SILICON 60V IC=12A TO-220 FULL PACK CASE HIGH CURRENT SWITCH COMP |
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