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參數(shù)資料
| 型號： | NTE2566 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Quadruple Operational Amplifier 14-CDIP -55 to 125 |
| 中文描述： | 硅晶體管互補高電流，高速開關 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | NTE2566 |
NTE2566 (NPN) & NTE2567 (PNP)
Silicon Complementary Transistors
High Current, High Speed Switch
Features:
Low Saturation Voltage
Fast Switching Speed
Isolated TO220 Type Package
Absolute Maximum Ratings:
(T
C
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V
50V
6V
12A
15A
30W
2W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
I
CBO
I
EBO
h
FE
Test Conditions
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 5A
V
CE
= 5V, I
C
= 1A
I
C
= 6A, I
B
= 0.6A
V
(BR)CBO
I
C
= 1mA, I
E
= 0
V
(BR)CEO
I
C
= 1mA, R
BE
=
∞
V
(BR)EBO
I
E
= 1mA, I
C
= 0
Min
–
–
100
30
–
–
60
50
6
Typ
–
Max
0.1
0.1
200
–
–
0.4
–
–
–
Unit
mA
mA
–
–
Gain Bandwidth Product
Collector–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
f
T
10
–
–
–
–
MHz
V
V
V
V
V
CE(sat)
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