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參數資料
| 型號： | NTE256 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Dual Linear FET Controller 8-SOIC 0 to 70 |
| 中文描述： | 硅NPN晶體管達林頓瓦特/阻尼二極管 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | NTE256 |
NTE256
Silicon NPN Transistor
Darlington
w
/Damper Diode
Description:
The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an
integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output
stage in high power, fast switching applications.
Absolute Maximum Ratings:
Collector–Base Voltagte (I
E
= 0), V
CBO
Collector–Emitter Voltage (I
B
= 0), V
CEO
Emitter–Base Voltage (I
C
= 0), V
EBO
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (t
p
= 10ms)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
≤
+25
°
C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
600V
400V
10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
28A
35A
6A
150W
+175
°
C
–65
°
to + 175
°
C
1.0
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CEO
I
CEV
V
CEO
= 400V, I
B
= 0
V
CE
= 600V, V
BE
= 1.5V, Note 1
V
CE
= 600V, V
BE
= 1.5V, T
C
= +100
°
C,
Note 1
–
–
1
mA
μ
A
mA
–
–
100
–
–
2
Emitter Cutoff Current
I
EBO
V
EB
= 2V, I
C
= 0, Note 1
I
C
= 100mA, Note 1
I
C
= 10A, I
B
= 0.5A
I
C
= 18A, I
B
= 1.8A
I
C
= 22A, I
B
= 2.2A
I
C
= 28A, I
B
= 5.6A
–
–
175
mA
Collector–Emitter Sustaining Voltage
V
CEO(sus)
V
CE(sat)
400
–
–
V
Collector–Emitter Saturation Voltage
–
–
2.0
V
–
–
2.5
V
–
–
3.0
V
–
–
5.0
V
Note 1. Pulsed: Pulse Width = 300
μ
s, Duty Cycle = 1.5%.
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相關代理商/技術參數 |
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| NTE2560 | 制造商:NTE Electronics 功能描述:T-PNP SI DARLINGTON |
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