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參數(shù)資料
| 型號： | NTE2561 |
| 廠商： | NTE Electronics, Inc. |
| 元件分類： | 視頻放大器 |
| 英文描述： | Silicon NPN Transistor Video Amplifier |
| 中文描述： | 硅NPN晶體管視頻放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 19K |
| 代理商： | NTE2561 |
NTE2561
Silicon NPN Transistor
Video Amplifier
Features:
High Gain–Bandwidth Product
High Breakdown Voltage
Large Current
Small Reverse Transfer Capacitance
Applications:
Wide–Band Amplifiers
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Pulse)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V
80V
3V
500mA
1.0A
1.75W
15W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
I
CBO
I
EBO
h
FE
Test Conditions
Min
–
–
30
20
–
–
–
–
–
100
80
3
Typ
–
–
–
–
1.2
4.4
3.8
–
–
–
–
–
Max
0.1
5.0
200
–
–
–
–
0.6
1.2
–
–
–
Unit
μ
A
μ
A
V
CB
= 80V, I
E
= 0
V
EB
= 2V, I
C
= 0
V
CE
= 10V, I
C
= 50mA
V
CE
= 10V, I
C
= 100mA
V
CE
= 10V, I
C
= 100mA
V
CB
= 30V, f = 1MHz
V
CB
= 30V, f = 1MHz
I
C
= 300mA, I
B
= 30mA
I
C
= 300mA, I
B
= 30mA
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, R
BE
=
∞
I
E
= 100
μ
A, I
C
= 0
Gain–Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
f
T
GHz
pF
pF
V
V
V
V
V
C
ob
C
re
V
CE(sat)
V
BE(sat)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
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