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參數(shù)資料
| 型號(hào)： | NTE2558 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor Darlington, High Voltage, High Speed Switch w/ Damper Diode |
| 中文描述： | 硅NPN晶體管達(dá)林頓，高壓，高速開(kāi)關(guān)瓦特/阻尼二極管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 24K |
| 代理商： | NTE2558 |
NTE2558
Silicon NPN Transistor
Darlington, High Voltage, High Speed Switch
w
/ Damper Diode
Features:
High Reliability
High Collector–Base Breakdown Voltage
On–Chip Damper Diode
Applications:
High–Voltage, High–Power Switching
Induction Cookers
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current. I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1500V
800V
5V
15A
30A
3A
250W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Sustaining Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Symbol
I
CBO
I
EBO
h
FE
V
CEO(sus)
I
C
= 100mA
V
CE(sat)
I
C
= 15A, I
B
= 0.75A
V
BE(sat)
I
C
= 15A, I
B
= 0.75A
V
(BR)CBO
I
C
= 5mA, I
E
= 0
Test Conditions
V
CB
= 800V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 15A
Min
–
–
25
800
–
–
150
0
–
–
Typ
–
–
–
–
–
–
–
Max Unit
0.1
600
–
–
3.0
2.5
–
mA
mA
V
V
V
V
Diode Forward Voltage
Fall Time
V
F
t
f
I
EC
= 15A
I
C
= 15A, I
B1
= 1A,
I
B2
= –5A, V
CC
= 200V,
R
L
= 13.3
–
–
2.0
2.0
V
μ
s
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