參數(shù)資料
型號(hào): NTE249
廠商: NTE Electronics, Inc.
英文描述: Silicon Complementary Transistors Darlington Power Amplifier
中文描述: 硅達(dá)林頓晶體管互補(bǔ)功率放大器
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 25K
代理商: NTE249
Electrical Characteristics (Cont’d):
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics
(Note 1)
DC Current Gain
h
FE
V
CE
= 3V, I
C
= 10A
I
C
= 10A, I
B
= 40mA
I
C
= 16A, I
B
= 80mA
V
CE
= 3V, I
C
= 10A
1000
Collector
Emitter Saturation Voltage
V
CE(sat)
2.5
V
4.0
V
Base
Emitter Voltage
V
BE
3.0
V
Note 1. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 2%
NTE249
NTE250
B
C
E
B
C
E
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.188 (4.8) R Max
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