參數(shù)資料
型號(hào): NTD60N02R
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: Power MOSFET 62 A, 24 V, N−Channel, DPAK
中文描述: 32 A, 25 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: CASE 369AA-01, DPAK-3
文件頁(yè)數(shù): 6/8頁(yè)
文件大小: 81K
代理商: NTD60N02R
NTD60N02R
http://onsemi.com
6
PACKAGE DIMENSIONS
DPAK
CASE 369C01
ISSUE O
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005)
T
E
C
U
J
H
T
SEATING
Z
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
MIN
0.235
0.250
0.086
0.027
0.018
0.037
0.180 BSC
0.034
0.018
0.102
0.090 BSC
0.180
0.025
0.020
0.035
0.155
MAX
0.245
0.265
0.094
0.035
0.023
0.045
MIN
5.97
6.35
2.19
0.69
0.46
0.94
4.58 BSC
0.87
0.46
2.60
2.29 BSC
4.57
0.63
0.51
0.89
3.93
MAX
6.22
6.73
2.38
0.88
0.58
1.14
MILLIMETERS
INCHES
0.040
0.023
0.114
1.01
0.58
2.89
0.215
0.040
0.050
5.45
1.01
1.27
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
2
3
4
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
mm
inches
SCALE 3:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
相關(guān)PDF資料
PDF描述
NTD60N02R-001 Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02R-032 Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02R-032G Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02R-1G Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02RG Power MOSFET 62 A, 24 V, N−Channel, DPAK
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTD60N02R-001 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD60N02R-032 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02R-032G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 62 A, 24 V, N−Channel, DPAK
NTD60N02R-035 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD60N02R-1G 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube