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參數(shù)資料
| 型號(hào)： | NTD60N02R |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| 中文描述： | 32 A, 25 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369AA-01, DPAK-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 81K |
| 代理商： | NTD60N02R |
NTD60N02R
http://onsemi.com
4
2000
10
5
0
5
10
15
20
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (V)
C
T
J
= 25
°
C
V
GS
= 0 V
C
iss
C
oss
C
rss
C
iss
V
DS
= 0 V
C
rss
V
GS
V
DS
1500
1000
500
0
Figure 7. Capacitance Variation
Q
g
, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource and DraintoSource
Voltage versus Total Charge
1
10
100
1000
1
10
100
R
G
, GATE RESISTANCE ( )
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
t
V
DD
= 10 V
I
D
= 31 A
V
GS
= 10 V
1
10
100
0.1
1
10
100
R
DS(ON)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
s
100
s
1 ms
10 ms
dc
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
°
C
V
DS
, DRAINTOSOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased Safe Operating Area
I
D
,
80
0.2
0.4
0.6
0.8
1.0
1.2
Figure 10. Diode Forward Voltage versus
Current
V
SD
, SOURCETODRAIN VOLTAGE (V)
I
S
,
V
GS
= 0 V
T
J
= 25
°
C
t
r
t
d(off)
t
f
t
d(on)
0
1
2
3
4
5
0
4
6
10
Q
GS
Q
DS
V
GS
I
D
= 31 A
T
J
= 25
°
C
2
8
V
D
,
V
DS
Q
T
0
4
8
12
16
20
V
G
,
70
60
50
40
30
20
10
0
1.4
1.6
1.8
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PDF描述 |
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| NTD60N02R-001 | Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| NTD60N02R-032 | Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| NTD60N02R-032G | Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| NTD60N02R-1G | Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| NTD60N02RG | Power MOSFET 62 A, 24 V, N−Channel, DPAK |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD60N02R-001 | 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD60N02R-032 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| NTD60N02R-032G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| NTD60N02R-035 | 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD60N02R-1G | 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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