- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361156 > NTD60N02R (ON SEMICONDUCTOR) Power MOSFET 62 A, 24 V, N−Channel, DPAK PDF資料下載
參數(shù)資料
| 型號： | NTD60N02R |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| 中文描述： | 32 A, 25 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369AA-01, DPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 81K |
| 代理商： | NTD60N02R |
NTD60N02R
http://onsemi.com
3
TYPICAL CHARACTERISTICS
10
100
1000
10000
I
D
,
0
6
12
18
24
V
DS
, DRAINTOSOURCE VOLTAGE (V)
T
J
= 100
°
C
T
J
= 175
°
C
V
GS
= 0 V
100000
0
20
40
60
80
100
120
0
2
4
6
8
10
V
DS
, DRAINTOSOURCE VOLTAGE (V)
I
D
,
V
GS
= 10 V
140
4.5 V
5.0 V
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
4.2 V
2.4 V
8.0 V
6.0 V
2.6 V
T
J
= 25
°
C
Figure 1. OnRegion Characteristics
0.05
2
4
6
8
10
R
D
,
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus
GatetoSource Voltage
V
GS
, GATETOSOURCE VOLTAGE (V)
V
GS
, GATETOSOURCE VOLTAGE (V)
I
D
= 62 A
T
J
= 25
°
C
0
0.01
0.02
0.03
0.04
0.05
20
40
60
80
100
120
T
J
= 25
°
C
V
GS
= 4.5 V
Figure 4. OnResistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (A)
R
D
,
0.6
0.8
1.0
1.2
1.4
1.6
1.8
50
25
0
25
50
75
100
125
150
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
R
D
,
(
Figure 6. DraintoSource Leakage Current
versus Voltage
0
20
40
60
80
100
120
0
2
4
6
8
T
J
= 55
°
C
T
J
= 25
°
C
T
J
= 175
°
C
V
DS
10 V
I
D
= 31 A
V
GS
= 10 V
0.04
0.03
0.02
0.01
0
I
D
,
V
GS
= 10 V
140
2.0
175
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTD60N02R-001 | Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| NTD60N02R-032 | Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| NTD60N02R-032G | Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| NTD60N02R-1G | Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| NTD60N02RG | Power MOSFET 62 A, 24 V, N−Channel, DPAK |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD60N02R-001 | 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD60N02R-032 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| NTD60N02R-032G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| NTD60N02R-035 | 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD60N02R-1G | 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。