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參數(shù)資料
| 型號(hào)： | NTD60N02R |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| 中文描述： | 32 A, 25 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369AA-01, DPAK-3 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | NTD60N02R |
NTD60N02R
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
24
27.5
25.5
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
1.5
10
Adc
GateBody Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.5
4.1
2.0
Vdc
mV/
°
C
Static DraintoSource OnResistance (Note 3)
(V
GS
= 4.5 Vdc, I
D
= 15 Adc)
(V
GS
= 10 Vdc, I
D
= 20 Adc)
(V
GS
= 10 Vdc, I
D
= 31 Adc)
R
DS(on)
11.2
8.4
8.2
12.5
10.5
m
Forward Transconductance (V
DS
= 10 Vdc, I
D
= 15 Adc) (Note 3)
g
FS
27
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
1000
1330
pF
Output Capacitance
(V
DS
= 20 Vdc, V
= 0 Vdc,
f = 1.0 MHz)
C
oss
480
640
Transfer Capacitance
C
rss
180
225
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
7.0
ns
Rise Time
(V
GS
= 10 Vdc, V
DD
= 10 Vdc,
D
= 31 Adc, R
G
= 3.0 )
t
r
33
TurnOff Delay Time
t
d(off)
19
Fall Time
t
f
9.0
Gate Charge
Q
T
9.5
nC
(V
GS
= 4.5 Vdc, I
D
= 31 Adc,
V
= 10 Vdc) (Note 3)
DS
Q
GS
2.2
Q
GD
5.0
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 20 Adc, V
GS
= 0 Vdc) (Note 3)
= 31 Adc, V
= 0 Vdc)
S
= 15 Adc, V
GS
= 0 Vdc, T
J
= 125 C)
°
C)
V
SD
0.88
1.15
0 80
0.80
1.2
Vdc
(I
(I
S
31 Adc, V
GS
0 Vdc)
Reverse Recovery Time
t
rr
29.1
ns
(I
S
= 31 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s) (Note 3)
t
a
13.6
t
b
15.5
Reverse Recovery Stored Charge
Q
rr
0.02
C
3. Pulse Test: Pulse Width
4. Switching characteristics are independent of operating junction temperatures.
300 s, Duty Cycle
2%.
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| NTD60N02R-001 | Power MOSFET 62 A, 24 V, N−Channel, DPAK |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD60N02R-001 | 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD60N02R-032 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| NTD60N02R-032G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 62 A, 24 V, N−Channel, DPAK |
| NTD60N02R-035 | 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD60N02R-1G | 功能描述:MOSFET 25V 62A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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