參數(shù)資料
型號： NTD3055-094
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 12Amps, 60Volts N-Channel DPAK(12A, 60V，N通道，DPAK封裝的功率MOSFET)
中文描述： 12 A, 60 V, 0.094 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, CASE 369C-01, DPAK-3
文件頁數(shù)： 2/10頁
文件大?。?/td> 76K
代理商： NTD3055-094
NTD3055094
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
68
54.4
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
1.0
10
Adc
GateBody Leakage Current (V
GS
=
±
20
Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2.0
2.9
6.3
4.0
Vdc
mV/
°
C
Static DraintoSource OnResistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 6.0 Adc)
R
DS(on)
84
94
m
Static DraintoSource OnVoltage (Note 3)
(V
GS
= 10 Vdc, I
D
= 12 Adc)
(V
GS
= 10 Vdc, I
D
= 6.0 Adc, T
J
= 150
°
C)
V
DS(on)
0.85
0.77
1.35
Vdc
Forward Transconductance (Note 3) (V
DS
= 7.0 Vdc, I
D
= 6.0 Adc)
g
FS
6.7
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
323
450
pF
Output Capacitance
C
oss
107
150
Transfer Capacitance
C
rss
34
70
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
7.7
15
ns
Rise Time
= 48 Vdc, I
= 12 Adc,
(V
DD
D
12 Adc,
V
GS
= 10 Vdc, R
G
= 9.1 ) (Note 3)
t
r
32.3
70
TurnOff Delay Time
t
d(off)
25.2
50
Fall Time
t
f
23.9
50
Gate Charge
(V
DS
= 48 Vdc, I
D
= 12 Adc,
V
GS
= 10 Vdc) (Note 3)
Q
T
10.9
20
nC
Q
1
3.1
Q
2
4.2
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 12 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 12 Adc, V
GS
= 0 Vdc, T
J
= 150
°
C)
V
SD
0.94
0.82
1.15
Vdc
Reverse Recovery Time
(I
S
= 12 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s) (Note 3)
t
rr
33.1
ns
t
a
24
t
b
8.9
Reverse Recovery Stored Charge
Q
RR
0.047
C
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTD3055-094/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 12 Amps， 60 Volts
NTD3055-094-1 功能描述:MOSFET 60V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD3055-094-1G 功能描述:MOSFET 60V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD3055-094G 功能描述:MOSFET 60V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD3055-094T4 功能描述:MOSFET 60V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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