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參數(shù)資料
| 型號(hào)： | NTB25P06 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Power MOSFET −60 V, −27.5 A, P−Channel D2PAK |
| 中文描述： | 27.5 A, 60 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-04, D2PAK-3 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | NTB25P06 |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 2
1
Publication Order Number:
NTB25P06/D
NTB25P06
Power MOSFET
60 V, 27.5 A, PChannel D
2
PAK
Designed for low voltage, high speed switching applications and to
withstand high energy in the avalanche and commutation modes.
Features
PbFree Packages are Available
Typical Applications
PWM Motor Controls
Power Supplies
Converters
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
60
V
GatetoSource Voltage
Continuous
NonRepetitive (t
p
10 ms)
V
GS
V
GSM
15
20
V
Vpk
Drain Current
Continuous @ T
A
= 25
°
C
Single Pulse (t
p
10 s)
I
D
I
DM
27.5
80
A
Apk
Total Power Dissipation @ T
A
= 25
°
C
P
D
120
W
Operating and Storage
Temperature Range
T
J
, T
stg
55 to
+175
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 25 V, V
GS
= 10 V,
I
L(pk)
= 20 A, L = 3 mH, R
G
= 25 )
E
AS
600
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
R
JC
R
JA
R
JA
1.25
46.8
63.2
°
C/W
Maximum Lead Temperature for Soldering
Purposes, (1/8
″
from case for 10 s)
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1
″
pad size
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu Area 0.412 in
2
).
Device
Package
Shipping
ORDERING INFORMATION
NTB25P06
D
2
PAK
50 Units/Rail
D
2
PAK
CASE 418B
STYLE 2
1
2
3
4
PChannel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
Gate
Drain
Source
NTB25P06
YWW
NTB25P06 = Device Code
Y
= Year
WW
= Work Week
NTB25P06T4
D
2
PAK
800/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NTB25P06T4G
D
2
PAK
(PbFree)
800/Tape & Reel
NTB25P06G
D
2
PAK
(PbFree)
50 Units/Rail
60 V
65 m @ 10 V
I
D
MAX
V
(BR)DSS
R
DS(on)
TYP
27.5 A
http://onsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| NTB25P06G | 功能描述:MOSFET -60V -27.5A Pchannel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB25P06T4 | 功能描述:MOSFET -60V -27.5A Pchannel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB25P06T4G | 功能描述:MOSFET -60V -27.5A Pchannel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB27N06 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK |
| NTB27N06L | 制造商:ON Semiconductor 功能描述:Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220 |
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