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參數(shù)資料
| 型號： | NTB25P06 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET −60 V, −27.5 A, P−Channel D2PAK |
| 中文描述： | 27.5 A, 60 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-04, D2PAK-3 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 56K |
| 代理商： | NTB25P06 |
NTB25P06
http://onsemi.com
5
PACKAGE DIMENSIONS
D
2
PAK
CASE 418B04
ISSUE H
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SEATING
PLANE
S
G
D
T
M
0.13 (0.005)
T
2
3
1
4
3 PL
K
J
H
V
E
C
A
DIM
A
B
C
D
E
F
MIN
0.340
0.380
0.160
0.020
0.045
0.310
MAX
0.380
0.405
0.190
0.035
0.055
0.350
MIN
8.64
9.65
4.06
0.51
1.14
7.87
MAX
9.65
10.29
4.83
0.89
1.40
8.89
MILLIMETERS
INCHES
G
H
J
K
L
M
N
P
R
0.100 BSC
0.080
0.018
0.090
0.052
0.280
0.197 REF
0.079 REF
0.039 REF
2.54 BSC
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
0.110
0.025
0.110
0.072
0.320
2.79
0.64
2.79
1.83
8.13
S
V
0.575
0.045
0.625
0.055
14.60
1.14
15.88
1.40
B
M
B
W
W
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B01 THRU 418B03 OBSOLETE,
NEW STANDARD 418B04.
M
L
F
M
L
F
M
L
F
VARIABLE
CONFIGURATION
ZONE
R
N
P
U
VIEW WW
1
VIEW WW
2
VIEW WW
3
8.38
0.33
1.016
0.04
17.02
0.67
10.66
0.42
3.05
0.12
5.08
0.20
mm
inches
SCALE 3:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
相關(guān)PDF資料 |
PDF描述 |
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| NTB25P06G | Power MOSFET −60 V, −27.5 A, P−Channel D2PAK |
| NTB25P06T4 | Power MOSFET −60 V, −27.5 A, P−Channel D2PAK |
| NTB25P06T4G | Power MOSFET −60 V, −27.5 A, P−Channel D2PAK |
| NTB27N06L | Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220(27A, 60 V,邏輯電平，N通道，TO-220封裝的功率MOSFET) |
| NTP27N06L | Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220(27A, 60 V,邏輯電平，N通道，TO-220封裝的功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTB25P06G | 功能描述:MOSFET -60V -27.5A Pchannel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB25P06T4 | 功能描述:MOSFET -60V -27.5A Pchannel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB25P06T4G | 功能描述:MOSFET -60V -27.5A Pchannel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB27N06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK |
| NTB27N06L | 制造商:ON Semiconductor 功能描述:Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220 |
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