參數資料
型號: NTB10N40
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: Power MOSFET 10 Amps, 401 Volts N-Channel(10A,400V,N溝道增強型MOS場效應管(D2PAK封裝))
中文描述: 10 A, 400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: D2PAK-3
文件頁數: 3/4頁
文件大?。?/td> 44K
代理商: NTB10N40
NTP10N40, NTB10N40
http://onsemi.com
3
PACKAGE DIMENSIONS
TO–220 THREE–LEAD
TO–220AB
CASE 221A–09
ISSUE AA
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
MIN
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
0.080
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
2.04
MILLIMETERS
INCHES
B
Q
H
Z
L
V
G
N
A
K
F
1
2 3
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
D2PAK
CASE 418B–03
ISSUE D
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
S
G
D
–T–
M
0.13 (0.005)
T
2
3
1
4
3 PL
K
J
H
V
E
C
A
DIM
A
B
C
D
E
G
H
J
K
S
V
MIN
0.340
0.380
0.160
0.020
0.045
0.100 BSC
0.080
0.018
0.090
0.575
0.045
MAX
0.380
0.405
0.190
0.035
0.055
MIN
8.64
9.65
4.06
0.51
1.14
2.54 BSC
2.03
0.46
2.29
14.60
1.14
MAX
9.65
10.29
4.83
0.89
1.40
MILLIMETERS
INCHES
0.110
0.025
0.110
0.625
0.055
2.79
0.64
2.79
15.88
1.40
–B–
M
B
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