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參數(shù)資料
| 型號(hào)： | NTB10N40 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 10 Amps, 401 Volts N-Channel(10A,400V,N溝道增強(qiáng)型MOS場效應(yīng)管(D2PAK封裝）) |
| 中文描述： | 10 A, 400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 44K |
| 代理商： | NTB10N40 |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 1
1
Publication Order Number:
NTP10N40/D
NTP10N40, NTB10N40
Preferred Device
Advance Information
Power MOSFET
10 Amps, 400 Volts
N–Channel TO–220 and D2PAK
Designed for high voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Features
Higher Current Rating
Lower RDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
Typical Applications
Switch Mode Power Supplies
PWM Motor Controls
Converters
Bridge Circuits
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
400
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage
– Continuous
– Non–Repetitive (tp
400
Vdc
10 ms)
VGS
VGSM
20
40
Vdc
Drain
– Continuous
– Continuous @ 100
°
C
– Single Pulse (tp
Total Power Dissipation
Derate above 25
°
C
10
μ
s)
ID
ID
IDM
PD
10
7.5
35
Adc
142
1.14
Watts
W/
°
C
Operating and Storage Temperature
Range
TJ, Tstg
–55 to 150
°
C
Single Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 10 A, L = 10 mH, RG = 25
)
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
– Junction–to–Ambient (Note 1.)
EAS
500
mJ
R
θ
JC
R
θ
JA
R
θ
JA
TL
0.88
62.5
50
°
C/W
Maximum Lead Temperature for
Soldering Purposes, 1/8
″
from case
for 10 seconds
260
°
C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
10 AMPERES
400 VOLTS
RDS(on) = 500 m
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
NTP10N40
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
12
3
4
http://onsemi.com
N–Channel
D
S
G
MARKING DIAGRAMS
AND PIN ASSIGNMENTS
Drain
NTx10N40 = Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
NTP10N40
LLYWW
Gate
Source
Drain
NTB10N40
LLYWW
Gate
Source
Drain
Drain
1
2
3
D2PAK
CASE 418B
STYLE 2
4
NTB10N40
D2PAK
50 Units/Rail
NTB10N40T4
D2PAK
800/Tape & Reel
相關(guān)PDF資料 |
PDF描述 |
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| NTP10N40 | Power MOSFET 10 Amps, 400 Volts N-Channel(10A,400V,N溝道增強(qiáng)型MOS場效應(yīng)管（TO-220封裝）) |
| NTB125N02R | Power MOSFET 125 A, 24 V N-Channel TO-220, D2PAK |
| NTB125N02RT4 | Power MOSFET 125 A, 24 V N-Channel TO-220, D2PAK |
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| NTB22N06L | Power MOSFET 22Amps, 60 Volts,Logic Level N-Channel TO-220(22A, 60 V,邏輯電平，N通道，TO-220封裝的功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTB10N40/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TMOS 7 E-FET? Power Field Effect Transistor |
| NTB10N60 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTB1226AS | 制造商:IKO NIPPON THOMPSON 功能描述:AXL NDL RLR 12MM |
| NTB125N02R | 功能描述:MOSFET 24V 125A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB125N02R_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK |
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