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參數(shù)資料
| 型號： | NTB10N40 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 10 Amps, 401 Volts N-Channel(10A,400V,N溝道增強(qiáng)型MOS場效應(yīng)管(D2PAK封裝）) |
| 中文描述： | 10 A, 400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 44K |
| 代理商： | NTB10N40 |
NTP10N40, NTB10N40
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
400
–
–
475
–
–
Vdc
mV/
°
C
Zero Gate Voltage Collector Current
(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ =125
°
C)
Gate–Body Leakage Current (VGS =
±
20
Vdc, VDS = 0)
IDSS
–
–
–
–
10
100
μ
Adc
IGSS(f)
IGSS(r)
–
–
–
–
100
100
nAdc
ON CHARACTERISTICS
(Note 2.)
Gate Threshold Voltage
ID = 0.25 mA, VDS = VGS
Temperature Coefficient (Negative)
VGS(th)
2.0
–
2.5
6.5
4.0
–
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 5.0 Adc)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 10 Vdc, ID = 5.0 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
–
350
500
mOhm
–
–
–
–
6.0
5.3
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc)
gFS
2.0
7.0
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vd
f = 1.0 MHz)
V
0 Vd
Ciss
Coss
–
1440
2020
pF
Output Capacitance
–
360
500
Transfer Capacitance
Crss
–
15
30
SWITCHING CHARACTERISTICS
(Note 3.)
Turn–On Delay Time
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
–
10
20
ns
Rise Time
(VDD = 200 Vdc, ID = 10 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 9.1
RG 9.1
)
–
20
40
Turn–Off Delay Time
–
33
70
Fall Time
–
24
50
Gate Charge
–
24
30
nC
(VDS = 320 Vdc, ID = 10 Adc,
(VDS 320 Vdc, ID 10 Adc,
VGS = 10 Vdc)
–
6.0
–
–
7.0
–
–
12
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 2.)
(IS = 10 Adc, VGS = 0 Vdc)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
–
–
0.9
0.8
1.1
–
Vdc
Reverse Recovery Time
trr
ta
tb
–
305
–
ns
(IS = 10 Adc VGS
dIS/dt = 100 A/
μ
s)
0 Vdc
–
155
–
–
150
–
Reverse Recovery Stored
Charge
QRR
–
2.5
–
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″
from package to center of die)
LD
–
–
3.5
4.5
–
–
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
–
7.5
–
2. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperature.
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