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參數(shù)資料
| 型號： | NT511740C5J-60 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC?s CMOS silicon gate technology. |
| 中文描述： | 該NT511740C5J是4194304字× 4位動(dòng)態(tài)隨機(jī)存儲器的NTC熱敏假的嗎？擰CMOS硅柵技術(shù)。 |
| 文件頁數(shù)： | 9/18頁 |
| 文件大?。?/td> | 336K |
| 代理商： | NT511740C5J-60 |
9
NANYA TECHNOLOGY CORP
NANYA TECHNOLOGY CORP.
reserves the right to change products and specifications without notice.
NT5117405J
4,194,304-word X 4-bit
Dynamic RAM : Fast Page Mode with EDO
AC Characteristics (2/3)
NT10511740C5J-
50
NT511740C5J-
60
NT511740C5J-
70
Unit
Note
Parameter
Symbol
Min.
Max.
Min.
Max.
Min.
Max.
/RAS Hold Time
t
RSH
7
-
10
-
13
-
ns
/RAS Hold Time referenced to /OE
t
ROH
7
-
10
-
13
-
ns
/CAS Precharge Time (Fast Page Mode with EDO)
t
CP
7
-
10
-
13
-
ns
/CAS Pulse Width
t
/CAS
7
10,000
10
10,000
13
10,000
ns
/CAS Hold Time
t
CSH
35
-
40
-
45
-
ns
/CAS to /RAS Precharge Time
t
CRP
5
-
5
-
5
-
ns
/RAS Hold Time from /CAS Precharge Time
t
RHCP
30
-
35
-
40
-
ns
/OE Hold Time from /CAS (DQ Disable)
t
CHO
5
-
5
-
5
-
ns
/RAS to /CAS Delay Time
t
RCD
11
37
14
45
14
50
ns
5
/RAS to Column Address Delay Time
t
RAD
9
25
12
30
12
35
ns
6
Row Address Set-up Time
t
ASR
0
-
0
-
0
-
ns
Row Address Hold Time
t
RAH
7
-
10
-
13
-
ns
Column Address Set-up Time
t
ASC
0
-
0
-
0
-
ns
Column Address Hold Time
t
CAH
7
-
10
-
13
-
ns
Column Address to /RAS Lead Time
t
RAL
t
RCS
t
RCH
t
RRH
t
WCS
25
-
30
-
35
-
ns
Read Command Set-up Time
Read Command Hold Time
Read Command Hold Time referenced to /RAS
Write Command Set-up Time
0
0
0
0
-
-
-
-
0
0
0
0
-
-
-
-
0
0
0
0
-
-
-
-
ns
ns
ns
ns
9
9
10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NT511740C5J-70 | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC?s CMOS silicon gate technology. |
| NT511740D0J-60 | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-6L | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-50 | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NT511740C5J-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC?s CMOS silicon gate technology. |
| NT511740D0J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-5L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
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