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參數(shù)資料
| 型號： | NT511740C5J-60 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC?s CMOS silicon gate technology. |
| 中文描述： | 該NT511740C5J是4194304字× 4位動(dòng)態(tài)隨機(jī)存儲器的NTC熱敏假的嗎？擰CMOS硅柵技術(shù)。 |
| 文件頁數(shù)： | 8/18頁 |
| 文件大小： | 336K |
| 代理商： | NT511740C5J-60 |
8
NT5117405J
4,194,304-word X 4-bit
Dynamic RAM : Fast Page Mode with EDO
NANYA TECHNOLOGY CORP
NANYA TECHNOLOGY CORP.
reserves the right to change products and specifications without notice.
8. AC Characteristics (1/3)
(Vcc=5V
ó
o
C
to 70
o
C
) Note:1,2,3,12,13
NT511740C5J-
50
60
NT511740C5J-
NT511740C5J-
70
Unit Note
Parameter
Symbol
Min.
Max.
Min.
Max.
Min.
Max.
Random Read or Write Cycle Time
t
RC
84
-
104
-
124
-
ns
Read Modify Write Cycle Time
t
RWC
110
-
135
-
160
-
ns
Fast Page Mode Cycle Time
t
HPC
20
-
25
-
30
-
ns
Fast Page Mode Read Modify Write Cycle Time
t
PRWC
58
-
68
-
78
-
ns
Access Time form /RAS
t
RAC
-
50
-
60
-
70
ns
4,5,6
Access Time form /CAS
t
CAC
-
13
-
15
-
20
ns
4,5
Access Time form Column Address
t
AA
-
25
-
30
-
35
ns
4,6
Access Time form /CAS Precharge
t
CPA
-
30
-
35
-
40
ns
4
Access Time form /OE
t
/OEA
-
13
-
15
-
20
ns
4
Output Low Impedance Time from /CAS
t
CLZ
0
-
0
-
0
-
ns
4
Data Output Hold After /CAS Low
t
DOH
5
-
5
-
5
-
ns
/CAS to Data Output Buffer Turn-off Delay Time
t
CEZ
0
13
0
15
0
20
ns
7,8
/RAS to Data Output Buffer Turn-off Delay
Time
t
REZ
0
13
0
15
0
20
ns
7,8
/OE to Data Output Buffer Turn-off Delay Time
t
/OEZ
0
13
0
15
0
20
ns
7
/WE to Data Output Buffer Turn-off Delay
Time
t
/WEZ
0
13
0
15
0
20
ns
7
Transition Time
t
T
1
50
1
50
1
50
ns
3
Refresh Period
t
REF
-
32
-
32
-
32
ms
/RAS Precharge Time
t
RP
30
-
40
-
50
-
ns
/RAS Pulse Width
t
/RAS
50
10,000
60
10,000
70
10,000
ns
/RAS Pulse Width (Fast Page Mode with EDO)
t
/RASP
50
100,000
60
100,000 70
100,000
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NT511740C5J-70 | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC?s CMOS silicon gate technology. |
| NT511740D0J-60 | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-6L | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-50 | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NT511740C5J-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC?s CMOS silicon gate technology. |
| NT511740D0J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-5L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
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