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參數(shù)資料
| 型號： | NT511740C5J-60 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC?s CMOS silicon gate technology. |
| 中文描述： | 該NT511740C5J是4194304字× 4位動態(tài)隨機(jī)存儲器的NTC熱敏假的嗎？擰CMOS硅柵技術(shù)。 |
| 文件頁數(shù)： | 7/18頁 |
| 文件大小： | 336K |
| 代理商： | NT511740C5J-60 |
7
NANYA TECHNOLOGY CORP
NANYA TECHNOLOGY CORP.
reserves the right to change products and specifications without notice.
NT5117405J
4,194,304-word X 4-bit
Dynamic RAM : Fast Page Mode with EDO
7. DC Characteristics
(Vcc=5V+/-10% ,Ta=0
o
C to 70
o
C)
NT511740C
Min. Max. Min. Max. Min. Max.Unit Note
2.4
Vcc
2.4
Vcc
0
0.4
0
0.4
NT511740C
NT511740C
Parameter
Symbol
Condition
Output High Voltage
Output LOW Voltage
V
OH
V
OL
I
OH
=-5.0 mA
I
OL
=4.2 mA
0V<=V
<=6.5V;
All other pins not
under test = 0V
DQ disable
0V<=V
o
<=5.5V
2.4
0
Vcc
0.4
V
V
Input Leakage Current
I
L1
-10
10
-10
10
-10
10
μ
A
Output Leakage
Current
Average Power
Supply Current
(Operating)
I
L0
-10
10
-10
10
-10
10
μ
A
I
cc1
/RAS,CAC cycling,
tRC = Min.
-
120
-
110
-
100
mA
1,2
/RAS , /CAS=VIH
-
2
-
2
-
2
Power Supply
Current (Standby)
I
cc2
/RAS, /CAS
>=Vcc-0.2V
-
1
-
1
-
1
mA
1
Average Power
Supply Current
(/RAS-only Refresh)
I
cc3
/RAS cycling,
/CAS = VIH,
tRC=Min.
-
120
-
110
-
110
mA
1,2
Power Supply
Current (Standby)
I
cc5
/RAS= VIH,
/CAS= VIL,
DQ = enable
-
5
-
5
-
5
mA
1
Average Power
Supply Current
(/CAS before /RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
I
cc6
/RAS cycling,
/CAS before /RAS
-
110
-
100
-
90
mA
1,2
I
cc7
/RAS=VIL,
/CAS cycling
tpc=Min.
-
110
-
100
-
90
mA
1,3
NotesG 1. ICC Max. is specified as Icc for output open condition.
2.
Address can be changed once or less while /RAS=V
IL
.
3.
Address can be changed once or less while /CAS=V
IH
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NT511740C5J-70 | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC?s CMOS silicon gate technology. |
| NT511740D0J-60 | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-6L | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-50 | The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NT511740C5J-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC?s CMOS silicon gate technology. |
| NT511740D0J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-5L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
| NT511740D0J-60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. |
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