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參數(shù)資料
| 型號： | NSS12500UW3T2G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 12 V, 8.0 A, Low VCE(sat) PNP Transistor(12V, 8.0A, 低VCE(sat) PNP晶體管) |
| 中文描述： | 5000 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, MINIATURE, CASE 506AU-01, WDFN3, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 60K |
| 代理商： | NSS12500UW3T2G |
NSS12500UW3T2G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
12
Vdc
CollectorBase Breakdown Voltage
(I
C
= 0.1 mAdc, I
E
= 0)
V
(BR)CBO
12
Vdc
EmitterBase Breakdown Voltage
(I
E
= 0.1 mAdc, I
C
= 0)
V
(BR)EBO
7.0
Vdc
Collector Cutoff Current
(V
CB
= 12 Vdc, I
E
= 0)
I
CBO
0.1
Adc
Emitter Cutoff Current
(V
EB
= 7.0 Vdc)
I
EBO
0.1
Adc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
= 10 mA, V
CE
= 2.0 V)
(I
C
= 500 mA, V
CE
= 2.0 V)
(I
C
= 1.0 A, V
CE
= 2.0 V)
(I
C
= 2.0 A, V
CE
= 2.0 V)
(I
C
= 3.0 A, V
CE
= 2.0 V)
h
FE
250
250
250
200
180
300
300
250
CollectorEmitter Saturation Voltage (Note 4)
(I
C
= 0.1 A, I
B
= 0.010 A) (Note 5)
(I
C
= 1.0 A, I
B
= 0.100 A)
(I
C
= 1.0 A, I
B
= 0.010 A)
(I
C
= 2.0 A, I
B
= 0.020 A)
(I
C
= 3.0 A, I
B
= 0.030 A)
(I
C
= 4.0 A, I
B
= 0.400 A)
V
CE(sat)
0.008
0.055
0.080
0.135
0.190
0.200
0.012
0.070
0.100
0.170
0.240
0.260
V
BaseEmitter Saturation Voltage (Note 4)
(I
C
= 1.0 A, I
B
= 0.01 A)
V
BE(sat)
0.760
0.900
V
BaseEmitter Turnon Voltage (Note 4)
(I
C
= 2.0 A, V
CE
= 3.0 V)
V
BE(on)
0.800
0.900
V
Cutoff Frequency
(I
C
= 100 mA, V
CE
= 5.0 V, f = 100 MHz)
f
T
100
MHz
Input Capacitance (V
EB
= 0.5 V, f = 1.0 MHz)
Cibo
650
pF
Output Capacitance (V
CB
= 3.0 V, f = 1.0 MHz)
Cobo
210
pF
SWITCHING CHARACTERISTICS
Delay (V
CC
= 10 V, I
C
= 750 mA, I
B1
= 15 mA)
t
d
100
ns
Rise (V
CC
= 10 V, I
C
= 750 mA, I
B1
= 15 mA)
t
r
150
ns
Storage (V
CC
= 10 V, I
C
= 750 mA, I
B1
= 15 mA)
t
s
350
ns
Fall (V
CC
= 10 V, I
C
= 750 mA, I
B1
= 15 mA)
4. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle
≤
2%.
5. Guaranteed by design but not tested.
t
f
200
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NSS12500UW3T2G_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:12 V, 8.0 A, Low VCE(sat) PNP Transistor |
| NSS12501UW3T2G | 功能描述:兩極晶體管 - BJT LO V NPN TRANSISTOR 12V 7.0A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS12600CF8T1G | 功能描述:兩極晶體管 - BJT SBN_BE (MY1) CHPFET 12V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS12600CF8T1G_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:12 V, 6.0 A, Low VCE(sat) PNP Transistor |
| NSS12601CF8T1G | 功能描述:兩極晶體管 - BJT HEX SCHMITT TRIGGER INVERTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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