參數(shù)資料
型號(hào): NSBMC290-16
廠商: National Semiconductor Corporation
英文描述: Burst Mode Memory Controller
中文描述: 突發(fā)模式內(nèi)存控制器
文件頁數(shù): 13/20頁
文件大小: 318K
代理商: NSBMC290-16
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage (V
CC
)
Input Voltage (V
IN
)
DC Input Current (I
IN
)
Storage Temperature (T
STG
)
b
0.3V to
a
7V
b
0.3V to V
CC
a
0.3V
g
50 mA
b
65
§
C to
a
150
§
C
Recommended Operating
Conditions
Supply Voltage (V
CC
)
Ambient Temperature (T
A
)
Plastic Package
Ceramic Package
4.75V to 5.25V
0
§
C to
a
70
§
C
b
55
§
C to
a
85
§
C
DC Electrical Characteristics
Symbol
Description
Conditions
Min
Max
Units
V
IL
Low Level Input Voltage
V
CC
e
4.75V
0.8
V
V
IH
High Level Input Voltage
V
CC
e
5.25V
2.0
V
I
IL
Low Level Input Current
V
IN
e
V
SS
, V
CC
e
5.25V
b
10
m
A
I
IH
High Level Input Current
V
IN
e
V
CC
e
5.25V
10
m
A
V
OL
Low Level Output Voltage
V
IN
e
V
IL
or V
IH
I
OL
e
24 mA
0.4
V
V
OH
High Level Output Voltage
V
IN
e
V
IL
or V
IH
I
OL
e
24 mA
3.7
V
I
OZL
Low Level TRI-STATE
é
Output Current
V
IN
e
V
IL
or V
IH
V
O
e
V
SS
b
20
m
A
I
OZH
Low Level TRl-STATE
Output Current
V
IN
e
V
IL
or V
IH
V
O
e
5.25V
20
m
A
I
CC(Max)
Maximum Supply Current
Continuous Simple Access
Continuous Burst Access
100
30
mA
C
IN
Input Capacitance
20
pF
C
OUT
Output Capacitance
20
pF
13
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