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參數(shù)資料
| 型號： | NLAS3699BMN1R2G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 多路復(fù)用及模擬開關(guān) |
| 英文描述： | Dual DPDT Ultra−Low RON Switch |
| 中文描述： | DUAL 2-CHANNEL, DBL POLE DBL THROW SWITCH, QCC16 |
| 封裝： | 3 X 3 MM, 0.85 MM HEIGHT, LEAD FREE, MO-220VEED-6, QFN-16 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 104K |
| 代理商： | NLAS3699BMN1R2G |
NLAS3699B
http://onsemi.com
5
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
Symbol
Parameter
Test Conditions
V
CC
(V)
V
IS
(V)
Guaranteed Maximum Limit
Unit
40 C to 25 C
85 C
Min
Typ*
Max
Min
Max
t
ON
TurnOn Time
R
L
= 50
(Figures 3 and 4)
C
L
= 35 pF
2.3 4.5
1.5
50
60
ns
t
OFF
TurnOff Time
R
= 50
(Figures 3 and 4)
C
= 35 pF
2.3 4.5
1.5
30
40
ns
t
BBM
Minimum BreakBeforeMake Time
V
IS
= 3.0
R
= 50
(Figure 2)
C
L
= 35 pF
3.0
1.5
2
15
ns
Typical @ 25, V
CC
= 4.5 V
C
IN
Control Pin Input Capacitance
7.0
pF
C
SN
SN Port Capacitance
72
pF
C
D
*Typical Characteristics are at 25
°
C.
D Port Capacitance When Switch is Enabled
230
pF
ADDITIONAL APPLICATION CHARACTERISTICS
(Voltages Referenced to GND Unless Noted)
Symbol
Parameter
Condition
V
CC
(V)
25 C
Unit
Typical
BW
Maximum OnChannel 3dB
Bandwidth or Minimum Frequency
Response (Figure 12)
V
centered between V
CC
and GND
(Figure 5)
1.65 4.5
20
MHz
V
ONL
Maximum Feedthrough On Loss
V
IN
=
0 dBm @ 100 kHz to 50 MHz
V
IN
centered between V
CC
and GND (Figure 5)
1.65 4.5
0.06
dB
V
ISO
OffChannel Isolation (Figure 13)
f = 100 kHz; V
IS
=
1 V RMS; C
L
= 5 pF
V
IN
centered between V
CC
and GND(Figure 5)
1.65 4.5
62
dB
Q
Charge Injection Select Input to
Common I/O (Figure 8)
V
IN =
V
CC to
GND, R
IS
= 0 , C
L
= 1 nF
Q = C
L
x V
OUT
(Figure 6)
1.65 4.5
50
pC
THD
Total Harmonic Distortion THD +
Noise (Figure 7)
F
IS
= 20 Hz to 20 kHz, R
L
= R
gen
= 600 , C
L
= 50 pF
V
IS
=
2 V
PP
4.5
0.01
%
VCT
ChanneltoChannel Crosstalk
f = 100 kHz; V
IS
=
1 V RMS,
C
L
= 5 pF, R
L
= 50
V
IN
centered between V
CC
and GND (Figure 5)
1.65 4.5
62
dB
5. OffChannel Isolation = 20log10 (Vcom/Vno), Vcom = output, Vno = input to off switch.
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PDF描述 |
|---|---|
| NLAS3699B | Dual DPDT Ultra(雙DPDT，超低RON開關(guān)) |
| NLAS3699MN1R2G | Dual DPDT Ultra-Low RON Switch |
| NLAS3699 | Dual DPDT Ultra(雙路雙刀雙擲，超低導(dǎo)通電阻開關(guān)) |
| NLAS3799BLMNR2G | Dual DPDT Ultra−Low RON Switch |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NLAS3699MN1R2G | 功能描述:模擬開關(guān) IC Dual DPDT Analog Sw. Ind. Temp Low R(on) RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:2 開關(guān)配置:SPDT 開啟電阻（最大值）:0.1 Ohms 切換電壓（最大）: 開啟時間（最大值）: 關(guān)閉時間（最大值）: 工作電源電壓:2.7 V to 4.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DSBGA-16 |
| NLAS3799 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual DPDT Ultra−Low RON Switch |
| NLAS3799_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual DPDT Ultra−Low RON Switch |
| NLAS3799B | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual DPDT Ultra−Low RON Switch |
| NLAS3799BL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual DPDT Ultra−Low RON Switch |
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