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參數(shù)資料
| 型號(hào)： | NLAS3699BMN1R2G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 多路復(fù)用及模擬開關(guān) |
| 英文描述： | Dual DPDT Ultra−Low RON Switch |
| 中文描述： | DUAL 2-CHANNEL, DBL POLE DBL THROW SWITCH, QCC16 |
| 封裝： | 3 X 3 MM, 0.85 MM HEIGHT, LEAD FREE, MO-220VEED-6, QFN-16 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 104K |
| 代理商： | NLAS3699BMN1R2G |
Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 0
1
Publication Order Number:
NLAS3699B/D
NLAS3699B
Dual DPDT UltraLow R
ON
Switch
The NLAS3699B is a dual independent ultralow R
ON
DPDT
analog switch. This device is designed for low operating voltage, high
current switching of speaker output for cell phone applications. It can
switch a balanced stereo output. The NLAS3699B can handle a
balanced microphone/speaker/ringtone generator in a monophone
mode. The device contains a breakbeforemake feature.
Features
Single Supply Operation
1.65 to 4.5 V V
CC
Function Directly from LiON Battery
Maximum Breakdown Voltage: 5.5 V
Tiny 3 x 3 mm QFN PbFree Package
Meet JEDEC MO220 Specifications
Low Static Power
This is a PbFree Device*
Typical Applications
Cell Phone Speaker/Microphone Switching
RingtoneChip/Amplifier Switching
Four Unbalanced (SingleEnded) Switches
Stereo Balanced (PushPull) Switching
Important Information
ESD Protection:
HBM (Human Body Model) > 8000 V
MM (Machine Model) > 400 V
Continuous Current Rating Through each Switch
±
300 mA
Conforms to: JEDEC MO220, Issue H, Variation VEED6
Pin for Pin Compatible with STG3699
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
QFN16
CASE 485AE
MARKING
DIAGRAMS
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
ORDERING INFORMATION
1
NLAB
3699
ALYW
1
A
L
Y
W
= Assembly Location
= Wafer Lot
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
4
1
16
13
9
12
5
8
14
7
15
6
3
10
2
11
D1
1S1 Vcc 4S2
2S2 GND 3S1
D3
3S2
34IN
4S1
D4
D2
2S1
12IN
1S2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NLAS3699B | Dual DPDT Ultra(雙DPDT，超低RON開關(guān)) |
| NLAS3699MN1R2G | Dual DPDT Ultra-Low RON Switch |
| NLAS3699 | Dual DPDT Ultra(雙路雙刀雙擲，超低導(dǎo)通電阻開關(guān)) |
| NLAS3799BLMNR2G | Dual DPDT Ultra−Low RON Switch |
| NLAS3799BMNR2G | Dual DPDT Ultra−Low RON Switch |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NLAS3699MN1R2G | 功能描述:模擬開關(guān) IC Dual DPDT Analog Sw. Ind. Temp Low R(on) RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:2 開關(guān)配置:SPDT 開啟電阻（最大值）:0.1 Ohms 切換電壓（最大）: 開啟時(shí)間（最大值）: 關(guān)閉時(shí)間（最大值）: 工作電源電壓:2.7 V to 4.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DSBGA-16 |
| NLAS3799 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual DPDT Ultra−Low RON Switch |
| NLAS3799_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual DPDT Ultra−Low RON Switch |
| NLAS3799B | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual DPDT Ultra−Low RON Switch |
| NLAS3799BL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual DPDT Ultra−Low RON Switch |
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