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參數(shù)資料
| 型號： | NLAS3699BMN1R2G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 多路復(fù)用及模擬開關(guān) |
| 英文描述： | Dual DPDT Ultra−Low RON Switch |
| 中文描述： | DUAL 2-CHANNEL, DBL POLE DBL THROW SWITCH, QCC16 |
| 封裝： | 3 X 3 MM, 0.85 MM HEIGHT, LEAD FREE, MO-220VEED-6, QFN-16 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 104K |
| 代理商： | NLAS3699BMN1R2G |
NLAS3699B
http://onsemi.com
4
DC CHARACTERISTICS Digital Section
(Voltages Referenced to GND)
Symbol
Parameter
Condition
V
CC
1.8
2.5
3.6
4.3
Guaranteed Limit
Unit
40 C to 25 C
85 C
V
IH
Minimum HighLevel Input
Voltage, Select Inputs
1.2
1.7
2.2
2.6
1.2
1.7
2.2
2.6
V
V
IL
Maximum LowLevel Input
Voltage, Select Inputs
1.8
2.5
3.6
4.3
0.4
0.5
0.7
0.9
0.4
0.5
0.7
0.9
V
I
IN
Maximum Input Leakage
Current, Select Inputs
V
IN
= V
CC
or GND
4.3
0.1
1.0
A
I
OFF
Power Off Leakage Current
V
IN
= V
CC
or GND
0
0.5
2.0
A
I
CC
Maximum Quiescent Supply
Current (Note 2)
Select and V
IS
= V
CC
or GND
1.65 to 4.5
1.0
2.0
A
DC ELECTRICAL CHARACTERISTICS Analog Section
Symbol
Parameter
Condition
V
CC
2.5
3.0
4.3
Guaranteed Maximum Limit
Unit
40 C to 25 C
85 C
Min
Max
Min
Max
R
ON
NC/NO OnResistance
(Note 2)
V
IN
V
IS
= GND to V
CC
I
IN
I
100 mA
V
IL
or V
IN
V
IH
0.65
0.6
0.55
0.75
0.75
0.70
R
FLAT
NC/NO OnResistance Flatness
(Notes 2, 4)
I
COM
= 100 mA
V
IS
= 0 to V
CC
2.5
3.0
4.3
0.15
0.15
0.15
0.15
0.15
0.15
R
ON
OnResistance Match Between Channels
(Notes 2 and 3)
V
IS
= 1.3 V;
I
COM
= 100 mA
V
IS
= 1.5 V;
I
COM
= 100 mA
V
IS
= 2.2 V;
I
COM
= 100 mA
2.5
3.0
4.3
0.06
0.05
0.05
0.06
0.05
0.05
I
NC(OFF)
I
NO(OFF)
NC or NO Off Leakage Current (Note 2)
V
IN
= V
IL
or V
IH
V
NO
or V
= 0.3 V
V
COM
= 4.0 V
4.3
10
10
100
100
nA
I
COM(ON)
COM ON
Leakage Current
(Note 2)
V
IN
= V
IL
or V
IH
V
NO
0.3 V or 4.0 V with
V
NC
floating or
V
NC
0.3 V or 4.0 V with
V
NO
floating
V
COM
= 0.3 V or 4.0 V
4.3
10
10
100
100
nA
2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
3.
R
R
R
between nS1 or nS2.
4. Flatness is defined as the difference between the maximum and minimum value of onresistance as measured over the specified analog
signal ranges.
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PDF描述 |
|---|---|
| NLAS3699B | Dual DPDT Ultra(雙DPDT，超低RON開關(guān)) |
| NLAS3699MN1R2G | Dual DPDT Ultra-Low RON Switch |
| NLAS3699 | Dual DPDT Ultra(雙路雙刀雙擲，超低導(dǎo)通電阻開關(guān)) |
| NLAS3799BLMNR2G | Dual DPDT Ultra−Low RON Switch |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NLAS3699MN1R2G | 功能描述:模擬開關(guān) IC Dual DPDT Analog Sw. Ind. Temp Low R(on) RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:2 開關(guān)配置:SPDT 開啟電阻（最大值）:0.1 Ohms 切換電壓（最大）: 開啟時間（最大值）: 關(guān)閉時間（最大值）: 工作電源電壓:2.7 V to 4.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DSBGA-16 |
| NLAS3799 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual DPDT Ultra−Low RON Switch |
| NLAS3799_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual DPDT Ultra−Low RON Switch |
| NLAS3799B | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual DPDT Ultra−Low RON Switch |
| NLAS3799BL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual DPDT Ultra−Low RON Switch |
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