參數(shù)資料
型號(hào)： NGD18N40CLB
廠商： ON SEMICONDUCTOR
元件分類： IGBT 晶體管
英文描述： Ignition IGBT 18 Amps, 400 Volts
中文描述： 15 A, 430 V, N-CHANNEL IGBT
封裝： CASE 369C, DPAK-3
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 70K
代理商： NGD18N40CLB
NGD18N40CLBT4
http://onsemi.com
2
UNCLAMPED COLLECTORTOEMITTER AVALANCHE CHARACTERISTICS
(55
°
≤
T
J
≤
175
°
C)
Characteristic
Symbol
Value
Unit
Single Pulse CollectortoEmitter Avalanche Energy
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 21.1 A, L = 1.8 mH, Starting T
J
= 25
°
C
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 16.2 A, L = 3.0 mH, Starting T
J
= 25
°
C
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 18.3 A, L = 1.8 mH, Starting T
J
= 125
°
C
E
AS
400
400
300
mJ
Reverse Avalanche Energy
V
CC
= 100 V, V
GE
= 20 V, Pk I
L
= 25.8 A, L = 6.0 mH, Starting T
J
= 25
°
C
MAXIMUM SHORTCIRCUIT TIMES
(55
°
C
≤
T
J
≤
150
°
C)
E
AS(R)
2000
mJ
Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period)
t
sc1
750
s
Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period)
t
sc2
5.0
ms
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
R
θ
JC
1.3
°
C/W
Thermal Resistance, Junction to Ambient
DPAK (Note 1)
R
θ
JA
95
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
T
L
275
°
C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Clamp Voltage
CollectorEmitter Clam Voltage
BV
CES
I = 2 0 mA
= 2.0 mA
T
J
= 40 C to
150
°
C
380
395
420
V
DC
I
C
= 10 mA
T
J
= 40
°
C to
150
°
C
390
405
430
Zero Gate Voltage Collector Current
I
CES
T
J
= 25
°
C
2.0
20
A
μ
DC
V
CE
= 350 V,
V
GE
= 0 V
T
J
= 150
°
C
10
40*
T
J
= 40
°
C
1.0
10
V
CE
= 15 V,
V
GE
= 0 V
T
J
= 25
°
C
2.0
Reverse CollectorEmitter Leakage Current
I
ECS
T
J
= 25
°
C
0.7
1.0
mA
V
= 24 V
CE
T
J
= 150
°
C
12
25*
T
J
= 40
°
C
0.1
1.0
Reverse CollectorEmitter Clamp Voltage
B
VCES(R)
T
J
= 25
°
C
27
33
37
V
DC
I
= 75 mA
C
T
J
= 150
°
C
30
36
40
T
J
= 40
°
C
25
32
35
GateEmitter Clamp Voltage
BV
GES
I
G
= 5.0 mA
T
J
= 40
°
C to
150
°
C
11
13
15
V
DC
GateEmitter Leakage Current
I
GES
V
GE
= 10 V
T
J
= 40
°
C to
150
°
C
384
640
700
μ
A
DC
Gate Resistor (Optional)
R
G
T
J
= 40
°
C to
150
°
C
70
Gate Emitter Resistor
R
GE
T
J
= 40
°
C to
150
°
C
10
16
26
k
1. When surface mounted to an FR4 board using the minimum recommended pad size.
*Maximum Value of Characteristic across Temperature Range.
相關(guān)PDF資料
PDF描述
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