參數(shù)資料
型號： NGD15N41CL
廠商： ON SEMICONDUCTOR
元件分類： IGBT 晶體管
英文描述： Ignition IGBT 15 Amps, 410 Volts
中文描述： 15 A, 440 V, N-CHANNEL IGBT
封裝： CASE 369C, DPAK-3
文件頁數(shù)： 2/12頁
文件大小： 94K
代理商： NGD15N41CL
NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL
http://onsemi.com
2
UNCLAMPED COLLECTORTOEMITTER AVALANCHE CHARACTERISTICS
(55
°
≤
T
J
≤
175
°
C)
Characteristic
Symbol
Value
Unit
Single Pulse CollectortoEmitter Avalanche Energy
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 16.6 A, L = 1.8 mH, Starting T
J
= 25
°
C
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 15 A, L = 1.8 mH, Starting T
J
= 125
°
C
THERMAL CHARACTERISTICS
E
AS
250
200
mJ
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.4
°
C/W
Thermal Resistance, Junction to Ambient
DPAK (Note 1)
R
θ
JA
100
D
2
PAK (Note 1)
R
θ
JA
50
TO220
R
θ
JA
62.5
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
T
L
275
°
C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Clamp Voltage
CollectorEmitter Clam Voltage
BV
CES
I
C
= 2.0 mA
T
J
= 40 C to
150
°
C
380
410
440
V
DC
I
C
= 10 mA
T
J
= 40
°
C to
150
°
C
380
410
440
Zero Gate Voltage Collector Current
I
CES
V
CE
= 350 V,
V
GE
= 0 V
T
J
= 25
°
C
2.0
20
A
μ
DC
T
J
= 150
°
C
10
40*
T
J
= 40
°
C
1.0
10
Reverse CollectorEmitter Leakage Current
I
ECS
V
CE
= 24 V
T
J
= 25
°
C
0.7
2.0
mA
T
J
= 150
°
C
12
25*
T
J
= 40
°
C
0.1
1.0
Reverse CollectorEmitter Clamp Voltage
B
VCES(R)
I
C
= 75 mA
T
J
= 25
°
C
27
33
37
V
DC
T
J
= 150
°
C
30
36
40
T
J
= 40
°
C
25
31
35
GateEmitter Clamp Voltage
BV
GES
I
G
= 5.0 mA
T
J
= 40
°
C to
150
°
C
11
13
15
V
DC
GateEmitter Leakage Current
I
GES
V
GE
= 10 V
T
J
= 40
°
C to
150
°
C
384
640
1000
μ
A
DC
Gate Resistor (Optional)
R
G
T
J
= 40
°
C to
150
°
C
70
Gate Emitter Resistor
R
GE
T
J
= 40
°
C to
150
°
C
10
16
26
k
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GE(th)
I
C
= 1.0 mA,
V
GE
= V
CE
1 0
T
J
= 25
°
C
1.1
1.4
1.9
V
DC
T
J
= 150
°
C
0.75
1.0
1.4
T
J
= 40
°
C
1.2
1.6
2.1*
Threshold Temperature Coefficient
(Negative)
3.4
mV/
°
C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width
300
μ
S, Duty Cycle
*Maximum Value of Characteristic across Temperature Range.
2%.
相關(guān)PDF資料
PDF描述
NGD15N41CLT4 Ignition IGBT 15 Amps, 410 Volts
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NGD15N41CL/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Ignition IGBT DPAK 15 Amps， 410 Volts， 2.1 V(max)
NGD15N41CLT4 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
NGD15N41CLT4G 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
NGD15N41CLT4G 制造商:ON Semiconductor 功能描述:IGBT
NGD18N40ACLB 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT, 18 A, 400 V N.Channel DPAK
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