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參數(shù)資料
| 型號： | NGB15N41CLT4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Ignition IGBT 15 Amps, 410 Volts |
| 中文描述： | 15 A, 440 V, N-CHANNEL IGBT |
| 封裝： | LEAD FREE, CASE 418B-04, D2PAK-3 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 173K |
| 代理商： | NGB15N41CLT4G |
Semiconductor Components Industries, LLC, 2006
May, 2006
Rev. 7
1
Publication Order Number:
NGD15N41CL/D
NGD15N41CL,
NGB15N41CL,
NGP15N41CL
Preferred Device
Ignition IGBT
15 Amps, 410 Volts
N
Channel DPAK, D
2
PAK and TO
220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over
Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for Coil
on
Plug Applications
DPAK Package Offers Smaller Footprint and Increased Board Space
Gate
Emitter ESD Protection
Temperature Compensated Gate
Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
G
) and Gate
Emitter Resistor (R
GE
)
Pb
Free Packages are Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector
Emitter Voltage
V
CES
440
V
DC
Collector
Gate Voltage
V
CER
440
V
DC
Gate
Emitter Voltage
V
GE
15
V
DC
Collector Current
Continuous
@ T
C
= 25
°
C
Pulsed
I
C
15
50
A
DC
A
AC
ESD (Human Body Model)
R = 1500
Ω
, C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0
Ω
, C = 200 pF
ESD
800
V
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
107
0.71
Watts
W/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
15 AMPS
410 VOLTS
V
CE(on)
2.1 V @
I
C
= 10 A, V
GE
4.5 V
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
See general marking information in the device marking
section on page 8 of this data sheet.
DEVICE MARKING INFORMATION
TO
220AB
CASE 221A
STYLE 9
12
3
4
1
2
3
4
D
2
PAK
CASE 418B
STYLE 4
DPAK
CASE 369C
STYLE 2
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
1 2
3
4
C
E
G
R
G
R
GE
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| NGB18N40ACLBT4G | 功能描述:IGBT N-CH 18A 400V D2PAK-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
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