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參數(shù)資料
| 型號： | NGB8202N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | 20 A, 400 V, N−Channel D2PAK |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 114K |
| 代理商： | NGB8202N |
Semiconductor Components Industries, LLC, 2005
January, 2005
Rev. 1
1
Publication Order Number:
NGB8202N/D
NGB8202N
Ignition IGBT
20 A, 400 V, N
Channel D
2
PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for Coil
on
Plug and Driver
on
Coil Applications
Gate
Emitter ESD Protection
Temperature Compensated Gate
Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
G
) and Gate
Emitter Resistor (R
GE
)
Applications
Ignition Systems
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector
Emitter Voltage
V
CES
440
V
Collector
Gate Voltage
V
CER
440
V
Gate
Emitter Voltage
V
GE
15
V
Collector Current
Continuous
@ T
C
= 25
°
C
Pulsed
I
C
20
50
A
DC
A
AC
Continuous Gate Current
I
G
1.0
mA
Transient Gate Current (t
≤
2 ms, f
≤
100 Hz)
I
G
20
mA
ESD (Charged
Device Model)
ESD
2.0
kV
ESD (Human Body Model)
R = 1500 , C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0 , C = 200 pF
ESD
500
V
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
150
1.0
Watts
W/
°
C
Operating & Storage Temperature Range
T
J
, T
stg
55 to +175
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
20 AMPS
400 VOLTS
V
CE(on)
= 1.3 V @
I
C
= 10 A, V
GE
4.5 V
C
E
G
D
2
PAK
CASE 418B
STYLE 4
Device
Package
Shipping
ORDERING INFORMATION
NGB8202NT4
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
D
2
PAK
800 / Tape & Reel
MARKING
DIAGRAM
NGB8202N= Device Code
Y
= Year
WW
= Work Week
http://onsemi.com
NG
B8202N
YWW
R
GE
R
G
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PDF描述 |
|---|---|
| NGB8202NT4 | 20 A, 400 V, N−Channel D2PAK |
| NGB8204N | Ignition IGBT 18 Amps, 400 Volts |
| NGB8204NT4 | Ignition IGBT 18 Amps, 400 Volts |
| NGB8204NT4G | Ignition IGBT 18 Amps, 400 Volts |
| NGB8206NG | Ignition IGBT 20 A, 350 V, N−Channel D2PAK |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NGB8202N_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT |
| NGB8202NT4 | 功能描述:IGBT 晶體管 20A 400V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| NGB8202NT4G | 功能描述:IGBT 晶體管 20A 400V Ignition N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| NGB8204AN | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 18 Amps, 400 Volts |
| NGB8204ANT4G | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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