參數(shù)資料
型號(hào)： NGB8204NT4
廠(chǎng)商： ON SEMICONDUCTOR
元件分類(lèi)： IGBT 晶體管
英文描述： Ignition IGBT 18 Amps, 400 Volts
中文描述： 18 A, 430 V, N-CHANNEL IGBT
封裝： CASE 418B-04, D2PAK-3
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 155K
代理商： NGB8204NT4
Semiconductor Components Industries, LLC, 2006
August, 2006
Rev. 3
1
Publication Order Number:
NGB8204N/D
NGB8204N
Ignition IGBT
18 Amps, 400 Volts
N
Channel D
2
PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for Coil
on
Plug Applications
Gate
Emitter ESD Protection
Temperature Compensated Gate
Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Integrated Gate
Emitter Resistor (R
GE
)
Emitter Ballasting for Short
Circuit Capability
Pb
Free Package is Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector
Emitter Voltage
V
CES
430
V
DC
Collector
Gate Voltage
V
CER
430
V
DC
Gate
Emitter Voltage
V
GE
18
V
DC
Collector Current
Continuous
@ T
C
= 25
°
C
Pulsed
I
C
18
50
A
DC
A
AC
ESD (Human Body Model)
R = 1500 , C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0 , C = 200 pF
ESD
800
V
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
115
0.77
W
W/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
18 AMPS, 400 VOLTS
V
CE(on)
2.0 V @
I
C
= 10 A, V
GE
4.5 V
C
E
G
D
2
PAK
CASE 418B
STYLE 4
Device
Package
Shipping
ORDERING INFORMATION
NGB8204NT4
D
2
PAK
800 / Tape & Reel
MARKING DIAGRAM
4
Collector
GB
8204NG
AYWW
1
Gate
3
Emitter
2
Collector
GB8204N = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb
Free Package
R
GE
http://onsemi.com
1
NGB8204NT4G
D
2
PAK
(Pb
Free)
800 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
相關(guān)PDF資料
PDF描述
NGB8204NT4G Ignition IGBT 18 Amps, 400 Volts
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NGB8204NT4G 功能描述:馬達(dá)/運(yùn)動(dòng)/點(diǎn)火控制器和驅(qū)動(dòng)器 18A 400V Ignition N-Channel RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類(lèi)型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube
NGB8206AN 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Ignition IGBT 20 A, 350 V, N.Channel D2PAK
NGB8206ANSL3G 功能描述:IGBT 晶體管 IGBT 20A 350V N-CHANNEL RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
NGB8206ANT4G 功能描述:IGBT 晶體管 IGBT 20A 350V N-CHANNEL RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
NGB8206ANTF4G 功能描述:IGBT 晶體管 IGBT 20A 350V N-CHANNEL RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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