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參數(shù)資料
| 型號： | NGB8206NT4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Ignition IGBT 20 A, 350 V, N−Channel D2PAK |
| 中文描述： | 20 A, 390 V, N-CHANNEL IGBT |
| 封裝： | LEAD FREE, CASE 418B-04, D2PAK-3 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 126K |
| 代理商： | NGB8206NT4G |
Semiconductor Components Industries, LLC, 2006
August, 2006
Rev. 6
1
Publication Order Number:
NGB8206N/D
NGB8206N
Ignition IGBT
20 A, 350 V, N
Channel D
2
PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for Coil
on
Plug and Driver
on
Coil Applications
Gate
Emitter ESD Protection
Temperature Compensated Gate
Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
G
) and Gate
Emitter Resistor (R
GE
)
Pb
Free Packages are Available
Applications
Ignition Systems
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector
Emitter Voltage
V
CES
390
V
Collector
Gate Voltage
V
CER
390
V
Gate
Emitter Voltage
V
GE
15
V
Collector Current
Continuous
@ T
C
= 25
°
C
Pulsed
I
C
20
50
A
DC
A
AC
Continuous Gate Current
I
G
1.0
mA
Transient Gate Current (t
≤
2 ms, f
≤
100 Hz)
I
G
20
mA
ESD (Charged
Device Model)
ESD
2.0
kV
ESD (Human Body Model)
R = 1500 , C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0 , C = 200 pF
ESD
500
V
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
150
1.0
W
W/
°
C
Operating & Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
20 AMPS, 350 VOLTS
V
CE(on)
= 1.3 V @
I
C
= 10 A, V
GE
4.5 V
C
E
G
R
G
R
GE
http://onsemi.com
D
2
PAK
CASE 418B
STYLE 4
MARKING DIAGRAM
4 Collector
GB
8206NG
AYWW
1
Gate
3
Emitter
2
Collector
GB8206N = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb
Free Package
1
Device
Package
Shipping
ORDERING INFORMATION
NGB8206N
D
2
PAK
50 Units / Rail
NGB8206NG
D
2
PAK
(Pb
Free)
D
2
PAK
50 Units / Rail
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NGB8206NT4
800 / Tape & Reel
NGB8206NT4G
D
2
PAK
(Pb
Free)
800 / Tape & Reel
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NGB8206NTF4 | 功能描述:馬達(dá)/運動/點火控制器和驅(qū)動器 IGBT D2PAK 350V 20A RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube |
| NGB8206NTF4G | 功能描述:馬達(dá)/運動/點火控制器和驅(qū)動器 IGBT D2PAK 350V 20A RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube |
| NGB8207ABN | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 20 A, 365 V, N.Channel D2PAK |
| NGB8207ABNT4G | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| NGB8207AN | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 20 A, 365 V, N−Channel D2PAK |
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