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參數(shù)資料
| 型號(hào)： | NGB8207NT4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Ignition IGBT 20 A, 365 V, N−Channel D2PAK |
| 中文描述： | 20 A, 365 V, N-CHANNEL IGBT |
| 封裝： | LEAD FREE, D2PAK, CASE 418B, 3 PIN |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 99K |
| 代理商： | NGB8207NT4G |
Semiconductor Components Industries, LLC, 2007
January, 2007 Rev. 0
1
Publication Order Number:
NGB8207N/D
NGB8207N
Ignition IGBT
20 A, 365 V, NChannel D
2
PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for CoilonPlug and DriveronCoil Applications
GateEmitter ESD Protection
Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Minimum Avalanche Energy 500 mJ
Gate Resistor (R
G
) = 70
This is a PbFree Device
Applications
Ignition Systems
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CES
365
V
GateEmitter Voltage
V
GE
15
V
Collector CurrentContinuous
@ T
C
= 25
°
C Pulsed
I
C
20
50
A
DC
A
AC
Continuous Gate Current
I
G
1.0
mA
Transient Gate Current (t
≤
2 ms, f
≤
100 Hz)
I
G
20
mA
ESD (ChargedDevice Model)
ESD
2.0
kV
ESD (Human Body Model)
R = 1500 , C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0 , C = 200 pF
ESD
500
V
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C (Note 1)
P
D
165
1.1
W
W/
°
C
Operating & Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Assuming infinite heatsink CasetoAmbient
20 AMPS
365 VOLTS
V
CE(on)
= 1.5 V Typ @
I
C
= 10 A, V
GE
4.5 V
C
E
G
R
G
R
GE
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
NGB8207NT4G
D
2
PAK
(PbFree)
800 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
D
2
PAK
CASE 418B
STYLE 4
MARKING DIAGRAM
4
Collector
NGB
8207NG
AYWW
1
Gate
3
Emitter
2
Collector
NGB8207N= Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= PbFree Package
1
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