參數(shù)資料
型號(hào)： NGD18N40CLBT4G
廠(chǎng)商： ON SEMICONDUCTOR
元件分類(lèi)： IGBT 晶體管
英文描述： Ignition IGBT 18 Amps, 400 Volts
中文描述： 15 A, 430 V, N-CHANNEL IGBT
封裝： LEAD FREE, CASE 369C-01, DPAK-3
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 157K
代理商： NGD18N40CLBT4G
Semiconductor Components Industries, LLC, 2006
May, 2006
Rev. 7
1
Publication Order Number:
NGD18N40CLB/D
NGD18N40CLB
Ignition IGBT
18 Amps, 400 Volts
N
Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over
Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for Coil
on
Plug Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
Gate
Emitter ESD Protection
Temperature Compensated Gate
Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage Interfaces Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
G
) and Gate
Emitter Resistor (R
GE
)
Emitter Ballasting for Short
Circuit Capability
Pb
Free Package is Available*
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector
Emitter Voltage
V
CES
430
V
DC
Collector
Gate Voltage
V
CER
430
V
DC
Gate
Emitter Voltage
V
GE
18
V
DC
Collector Current
Continuous
@ T
C
= 25
°
C
Pulsed
I
C
15
50
A
DC
A
AC
ESD (Human Body Model)
R = 1500
Ω
, C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0
Ω
, C = 200 pF
ESD
800
V
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
115
0.77
Watts
W/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
18 AMPS
400 VOLTS
V
CE(on)
2.0 V @
I
C
= 10 A, V
GE
4.5 V
DPAK
CASE 369C
STYLE 7
1 2
3
4
http://onsemi.com
MARKING DIAGRAM
1
Gate
4
Collector
2
Collector
3
Emitter
YWW
G18
N40BG
G18N40B = Device Code
Y
= Year
WW
= Work Week
G
= Pb
Free Device
Device
Package
Shipping
ORDERING INFORMATION
NGD18N40CLBT4
DPAK
2500/Tape & Reel
NGD18N40CLBT4G
DPAK
(Pb
Free)
2500/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
C
E
G
R
G
R
GE
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