參數(shù)資料
型號(hào)： NGD15N41CLT4G
廠商： ON SEMICONDUCTOR
元件分類(lèi)： IGBT 晶體管
英文描述： Ignition IGBT 15 Amps, 410 Volts
中文描述： 15 A, 440 V, N-CHANNEL IGBT
封裝： LEAD FREE, CASE 369C-01, DPAK-3
文件頁(yè)數(shù)： 1/11頁(yè)
文件大?。?/td> 173K
代理商： NGD15N41CLT4G
Semiconductor Components Industries, LLC, 2006
May, 2006
Rev. 7
1
Publication Order Number:
NGD15N41CL/D
NGD15N41CL,
NGB15N41CL,
NGP15N41CL
Preferred Device
Ignition IGBT
15 Amps, 410 Volts
N
Channel DPAK, D
2
PAK and TO
220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over
Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for Coil
on
Plug Applications
DPAK Package Offers Smaller Footprint and Increased Board Space
Gate
Emitter ESD Protection
Temperature Compensated Gate
Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
G
) and Gate
Emitter Resistor (R
GE
)
Pb
Free Packages are Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector
Emitter Voltage
V
CES
440
V
DC
Collector
Gate Voltage
V
CER
440
V
DC
Gate
Emitter Voltage
V
GE
15
V
DC
Collector Current
Continuous
@ T
C
= 25
°
C
Pulsed
I
C
15
50
A
DC
A
AC
ESD (Human Body Model)
R = 1500
Ω
, C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0
Ω
, C = 200 pF
ESD
800
V
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
107
0.71
Watts
W/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
15 AMPS
410 VOLTS
V
CE(on)
2.1 V @
I
C
= 10 A, V
GE
4.5 V
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
See general marking information in the device marking
section on page 8 of this data sheet.
DEVICE MARKING INFORMATION
TO
220AB
CASE 221A
STYLE 9
12
3
4
1
2
3
4
D
2
PAK
CASE 418B
STYLE 4
DPAK
CASE 369C
STYLE 2
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
1 2
3
4
C
E
G
R
G
R
GE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NGD15N41CLT4G 制造商:ON Semiconductor 功能描述:IGBT
NGD18N40ACLB 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Ignition IGBT, 18 A, 400 V N.Channel DPAK
NGD18N40ACLBT4G 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
NGD18N40CLB 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Ignition IGBT 18 Amps, 400 Volts
NGD18N40CLBT4 功能描述:馬達(dá)/運(yùn)動(dòng)/點(diǎn)火控制器和驅(qū)動(dòng)器 18A 400V Ignition RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類(lèi)型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube
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