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參數資料
| 型號： | NGB18N40CLBT4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Ignition IGBT 18 Amps, 400 Volts |
| 中文描述： | 18 A, 430 V, N-CHANNEL IGBT |
| 封裝： | LEAD FREE, CASE 418B-04, D2PAK-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 95K |
| 代理商： | NGB18N40CLBT4G |
Semiconductor Components Industries, LLC, 2006
May, 2006 Rev. 3
1
Publication Order Number:
NGB18N40CLB/D
NGB18N40CLBT4
Ignition IGBT
18 Amps, 400 Volts
NChannel D
2
PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and OverVoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for CoilonPlug Applications
GateEmitter ESD Protection
Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Integrated GateEmitter Resistor (R
GE
)
Emitter Ballasting for ShortCircuit Capability
PbFree Package is Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CES
430
V
DC
CollectorGate Voltage
V
CER
430
V
DC
GateEmitter Voltage
V
GE
18
V
DC
Collector CurrentContinuous
@ T
C
= 25
°
C Pulsed
I
C
18
50
A
DC
A
AC
ESD (Human Body Model)
R = 1500 , C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0 , C = 200 pF
ESD
800
V
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
115
0.77
W
W/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55 to +175
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
18 AMPS, 400 VOLTS
V
CE(on)
2.0 V @
I
C
= 10 A, V
GE
4.5 V
C
E
G
D
2
PAK
CASE 418B
STYLE 4
Device
Package
D
2
PAK
Shipping
ORDERING INFORMATION
NGB18N40CLBT4
800/Tape & Reel
MARKING DIAGRAM
4
Collector
GB
18N40BG
AYWW
1
Gate
3
Emitter
2
Collector
GB18N40B
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
http://onsemi.com
R
GE
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NGB18N40CLBT4G
D
2
PAK
(PbFree)
800/Tape & Reel
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