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參數(shù)資料
| 型號(hào)： | NE960R275 |
| 廠商： | NEC Corp. |
| 英文描述： | 0.2 W X, Ku-BAND POWER GaAs MES FET |
| 中文描述： | 0.2蠟質(zhì)，Ku波段功率GaAs場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大小： | 62K |
| 代理商： | NE960R275 |
Preliminary Data Sheet P13775EJ2V0DS00
2
NE960R2 SERIES
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V
DS
15
V
Gate to Source Voltage
V
GSO
–7
V
Drain Current
I
D
0.35
A
Gate Forward Current
I
GF
+2.5
mA
Gate Reverse Current
I
GR
–2.5
mA
Total Power Dissipation
P
T
2.5 (2.1
Note
)
W
Channel Temperature
T
ch
175
°
C
Storage Temperature
T
stg
–65 to +175
°
C
Note
NE961R200
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Test Condition
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
9.0
9.0
V
Gain Compression
Gcomp
3.0
dB
Channel Temperature
T
ch
+130
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= +25
°
C, Unless otherwise specified, using NEC standard test fixture.)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Saturated Drain Current
I
DSS
V
DS
= 1.5 V, V
GS
= 0 V
0.09
0.2
0.35
A
Pinch-off Voltage
V
p
V
DS
= 2.5 V, I
D
= 1 mA
–2.5
–1.8
–0.5
V
Gate to Drain Break Down
Voltage
BV
gd
I
gd
= 1 mA
15
V
Thermal Resistance
R
th
Channel to Case
60
(70
Note
)
°
C/W
Output Power at P
in
= +15 dBm
P
out
22.0
24.0
dBm
Output Power at 1 dB Gain
Compression Point
P
o (1 dB)
25.0
dBm
Power Added Efficiency at
P
O (1dB)
η
add
35
%
Linear Gain
G
L
f = 14.5 GHz, V
DS
= 9.0 V
R
g
= 1 k
I
Dset
= 90 mA (RF OFF)
8.0
10.0
dB
Note
NE961R200
Remark
DC and RF performance is 100 % testing.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE960R275_01 | 制造商:NEC 制造商全稱:NEC 功能描述:0.2W X, Ku-BAND POWER GaAs MESFET |
| NE960R5 | 制造商:NEC 制造商全稱:NEC 功能描述:0.5 W X, Ku-BAND POWER GaAs MES FET |
| NE960R500 | 制造商:NEC 制造商全稱:NEC 功能描述:0.5 W X, Ku-BAND POWER GaAs MES FET |
| NE960R575 | 功能描述:MOSFET X KU Band MESFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NE960R575_01 | 制造商:NEC 制造商全稱:NEC 功能描述:0.5W X, Ku-BAND POWER GaAs FET |
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