參數(shù)資料
型號： NE73435
廠商： NEC Corp.
英文描述： NPN SILICON GENERAL PURPOSE TRANSISTOR
中文描述： NPN硅晶體管一般用途
文件頁數(shù)： 4/5頁
文件大?。?/td> 39K
代理商： NE73435
(MHz)
MAG ANG MAG ANG MAG ANG
0.861
-28.4
6.880
0.810
-55.0
6.206
0.676
-115.5
4.323
0.616
-156.0
2.494
0.607
-175.1
1.709
0.610
171.3
1.317
0.613
160.0
1.071
0.618
149.5
0.896
0.630
128.9
0.647
MAG ANG
0.960
0.865
0.689
0.612
0.612
0.616
0.632
0.649
0.657 -112.9
(dB)
0.19
0.28
0.50
0.84
1.05
1.16
1.20
1.19
1.20
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
100
200
500
1000
1500
2000
2500
3000
4000
157.0
139.8
104.1
74.4
55.6
39.0
25.3
13.0
-8.4
0.026
0.047
0.070
0.085
0.095
0.107
0.118
0.132
0.170
70.5
56.9
37.3
30.5
32.2
32.2
33.9
33.5
33.7
-11.1
-19.2
-29.0
-38.3
-49.8
-62.2
-74.0
-87.3
24.2
21.2
17.9
14.7
11.2
8.5
6.9
5.7
3.1
100
200
500
1000
1500
2000
2500
3000
4000
0.798
0.733
0.628
0.603
0.605
0.613
0.621
0.628
0.644
-39.0
-74.2
-134.4
-166.4
178.1
166.2
155.9
146.0
126.0
10.428
8.974
5.214
2.797
1.893
1.442
1.161
0.967
0.690
151.6
131.4
96.8
70.8
53.1
37.6
24.2
12.0
-9.3
0.025
0.040
0.056
0.073
0.088
0.102
0.117
0.133
0.176
66.2
52.9
37.4
37.1
39.9
39.9
41.0
40.6
39.2
0.923
0.788
0.613
0.563
0.572
0.582
0.604
0.628
0.639 -111.8
-14.4
-22.4
-28.4
-36.6
-47.9
-60.5
-72.5
-85.9
0.22
0.31
0.62
0.94
1.09
1.16
1.15
1.10
1.09
26.2
23.5
19.7
15.8
11.5
9.1
7.6
6.7
4.1
V
CE
= 10 V, I
C
= 10 mA
100
200
500
1000
1500
2000
2500
3000
4000
0.687
0.635
0.603
0.607
0.621
0.633
0.646
0.652
0.672
-62.0
-106.6
-153.4
-175.8
171.8
161.4
151.8
142.4
122.6
16.892
12.598
5.959
3.063
2.039
1.532
1.220
1.009
0.712
142.1
118.5
89.6
67.1
50.5
35.2
22.4
10.4
-10.1
0.020
0.031
0.042
0.061
0.080
0.096
0.112
0.132
0.182
59.4
48.8
42.9
47.2
48.7
48.3
48.3
47.9
44.2
0.846
0.677
0.541
0.521
0.541
0.559
0.586
0.612
0.627 -111.0
-19.1
-24.6
-25.9
-33.7
-45.3
-58.0
-70.7
-84.2
0.26
0.40
0.81
1.07
1.12
1.14
1.10
1.02
0.96
29.3
26.1
21.5
15.4
12.0
9.8
8.4
8.0
5.9
100
200
500
1000
1500
2000
2500
3000
4000
0.584
0.594
0.613
0.632
0.650
0.666
0.678
0.686
0.699
-94.8
-134.2
-165.6
178.2
167.5
157.8
148.5
139.0
119.3
22.708
14.233
6.118
3.061
2.014
1.506
1.190
0.976
0.682
130.8
108.5
84.3
63.8
47.5
32.9
20.3
8.7
-11.2
0.015
0.023
0.034
0.054
0.072
0.089
0.108
0.132
0.190
57.7
48.1
51.7
53.6
55.5
55.1
56.1
55.3
49.2
0.761
0.599
0.515
0.517
0.545
0.564
0.594
0.621
0.634 -111.2
-21.6
-23.0
-22.0
-30.8
-43.4
-56.8
-69.8
-83.9
0.32
0.55
0.95
1.13
1.14
1.12
1.02
0.91
0.86
31.8
27.9
22.6
15.3
12.2
10.2
9.6
8.7
5.6
Coordinates in Ohms
Frequency in GHz
(V
CE
= 10 V, I
C
= 20 mA)
NE73435
V
CE
= 10 V, I
C
= 3 mA
FREQUENCY
S
11
S
21
S
12
S
22
K MAG
1
V
CE
= 10 V, I
C
= 5 mA
V
CE
= 10 V, I
C
= 20 mA
Note:
1. Gain Calculation:
|S
21
|
|S
12
|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE734 SERIES
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
0.2
0.4
0.6
0.8
1
1.5
2
3
4 5
10 20
50
-50
-20
20
10
5
4
3
2
1.5
1
0.8
0.6
0.4
0.2
-0.2
-0.4
-0.6
-0.8
-1
-1.5
-2
-3
-4
-5
-10
S
11
S
22
S
21
270
180
225
315
135
0
90
45
0.05
0.10
0.15
5.00
10.00
15.00
20.00
S
12
相關(guān)PDF資料
PDF描述
NE76000 LOW NOISE L TO Ku BAND GaAs MESFET
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NE76084 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE76084-SL C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
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