參數(shù)資料
型號: NE73435
廠商: NEC Corp.
英文描述: NPN SILICON GENERAL PURPOSE TRANSISTOR
中文描述: NPN硅晶體管一般用途
文件頁數(shù): 2/5頁
文件大?。?/td> 39K
代理商: NE73435
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
SYMBOLS
PARAMETERS
V
CBO
Collector to Base Voltage
V
CEO
Collector to Emitter Voltage
V
EBO
Emitter to Base Voltage
I
C
Collector Current
T
J
Junction Temperature
T
STG
Storage Temperature
UNITS
V
V
V
mA
°
C
°
C
RATINGS
30
14
3
50
200
2
-65 to +200
3
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Maximum Junction Temperature for the NE73430 is 150
°
C.
3. Maximum Storage Temperature for the NE73430 and the
NE73435 Grade D is 150
°
C.
FREQ.
(MHz)
V
CE
= 10 V, I
C
= 3 mA
500
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
Rn/50
2.0
16.1
0.30
80
0.63
1000
1500
2000
3.1
4.2
5.1
11.2
9.2
7.1
0.43
0.54
0.56
126
168
178
0.33
0.19
0.20
NE73435
TYPICAL NOISE PARAMETERS
(T
A
= 25
°
C)
NE734 SERIES
V
CE
= 10 V, I
C
= 15 mA
500
1000
1500
2000
3.3
4.7
6.5
7.4
17.5
13.5
10.8
9.2
0.34
0.47
0.67
0.64
120
168
-174
-163
0.36
0.27
0.13
0.46
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
SATURATION VOLTAGE vs.
COLLECTOR CURRENT
C
B
V
C
,
B
Collector Current, I
C
(mA)
V
BE
(SAT)
I
C
= 10XI
B
V
CE
(SAT)
0.1 0.2 0.5 1 2 5 10 20 50
2
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
G
T
(
Collector Current, I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
V
CE
= 10 V
NE73435
0.5 0.7 1 2 3 5 7 10 20 30 50
10
7
5
3
2
1
0.7
0.5
0.3
0.1
0.2
D
F
Collector Current, I
C
(mA)
DC CURRENT GAIN
vs. COLLECTOR CURRENT
V
CE
= 10 V
V
CE
= 1 V
0.5 0.7 1 2 3 5 7 10 20 30 50
500
300
200
100
70
50
30
20
10
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