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參數(shù)資料
| 型號(hào)： | NE722S01 |
| 廠商： | NEC Corp. |
| 英文描述： | NECs C TO X BAND N-CHANNEL GaAs MES FET |
| 中文描述： | 鄰舍C至X波段N溝道砷化鎵場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 128K |
| 代理商： | NE722S01 |
PART NUMBER
SUPPLY FORM
MARKING
NE722S01-T1
Tape & Reel 1000 pcs/reel
NE722S01-T1B
1
Tape & Reel 4000 pcs/reel
Note:
1. Available if quantity is over 100k per month
ORDERING INFORMATION
RECOMMENDED
OPERATING CONDITIONS
(T
A
= 25
°
C)
PART NUMBER
SYMBOLS
PARAMETERS
V
DS
Drain to Source Voltage
I
DS
Drain Current
NE722S01
UNITS MIN TYP MAX
V
mA
3
4
30
40
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DS
Drain to Source Voltage
V
5.0
V
GS
Gate to Source Voltage
V
-5.0
V
GD
Gate to Drain Voltage
V
-6.0
I
DS
Drain Current
mA
I
DSS
P
T
Total Power Dissipation
mW
250
P
IN
Input Power
mW
40
T
CH
Channel Temperature
°
C
125
T
STG
Storage Temperature
°
C
-65 to +125
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
NE722S01
D
D
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
D
D
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, V
DS
(V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
Gate to Source Voltage, V
GS
(V)
60
40
80
20
0
-4.0
-2.0
V
DS
= 3.0 V
0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
T
)
M
M
F
2
S
|
2
500
400
300
200
100
0
50
100
150
200
250
V
DS
= 3 V
I
DS
= 10 mA
12
16
20
0
8
4
1
5
10 14 20
50
MSG.
|S
21S
|
2
0.5
MAG.
MAG =
|S
21
|
|S
12
K - 1
).
(
K ±
When K
≤
1, |
MSG =
|S
12
|
2 |S
12
S
21
= S
11
S
22
- S
21
S
12
,
|S
21
|
, K =
1 + |
| - |S
11
||
22
|
2
2
Ambient Temperature, T
A
(
°
C)
Frequency, f
(GHz)
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
60
80
40
20
100
0
4
3
5
2
1
-0.5 V
-1.0 V
-2.0 V
V
GS
= 0.0 V
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
P
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE722S01-T1 | NECs C TO X BAND N-CHANNEL GaAs MES FET |
| NE722S01-T1B1 | NECs C TO X BAND N-CHANNEL GaAs MES FET |
| NE734 | NPN SILICON GENERAL PURPOSE TRANSISTOR |
| NE73430 | NPN SILICON GENERAL PURPOSE TRANSISTOR |
| NE73430-T1 | NPN SILICON GENERAL PURPOSE TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE722S01-T1 | 功能描述:射頻GaAs晶體管 C-X Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE722S01-T1B | 功能描述:射頻GaAs晶體管 C-X Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE722S01-T1B1 | 制造商:NEC 制造商全稱:NEC 功能描述:NECs C TO X BAND N-CHANNEL GaAs MES FET |
| NE734 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON GENERAL PURPOSE TRANSISTOR |
| NE73412 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50MA I(C) | TO-72 |
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