參數(shù)資料
型號： NE71300N
廠商： NEC Corp.
英文描述： LOW NOISE L TO K-BAND GaAs MESFET
中文描述： 低噪聲L至K波段GaAs MESFET器件
文件頁數(shù)： 3/8頁
文件大小： 91K
代理商： NE71300N
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
0.998
0.995
0.982
0.959
0.928
0.895
0.852
0.817
0.762
0.736
0.713
0.702
0.687
0.682
0.675
0.674
0.676
0.673
0.666
0.664
0.656
0.658
0.654
0.646
0.660
0.670
0.681
-7.5
-15.0
-29.9
-44.4
-58.8
-72.7
-86.5
-100.5
-113.5
-126.3
-139.6
-153.1
-166.7
-179.1
169.7
160.4
152.0
144.9
138.2
132.5
126.5
119.6
113.6
107.2
100.7
94.7
89.6
2.931
2.922
2.882
2.823
2.703
2.652
2.470
2.384
2.248
2.108
2.046
1.911
1.842
1.710
1.618
1.501
1.391
1.315
1.248
1.112
1.101
0.995
0.933
0.882
0.783
0.760
0.675
172.9
165.9
152.1
138.0
124.6
111.2
97.9
86.2
73.2
63.8
51.1
40.7
29.2
17.8
8.2
-2.5
-10.4
-19.8
-31.4
-36.3
-45.1
-51.5
-63.7
-71.0
-77.6
-86.4
-91.4
0.013
0.026
0.052
0.075
0.097
0.113
0.128
0.141
0.141
0.147
0.155
0.159
0.156
0.142
0.139
0.138
0.145
0.149
0.161
0.174
0.160
0.137
0.097
0.099
0.098
0.111
0.130
84.6
79.9
69.1
59.1
48.8
38.4
28.8
18.8
8.9
2.4
-4.9
-14.4
-24.5
-27.6
-31.9
-32.3
-37.8
-39.2
-42.3
-51.1
-65.9
-80.3
-76.0
-68.6
-60.6
-57.8
-57.9
0.602
0.600
0.593
0.581
0.563
0.541
0.506
0.472
0.426
0.396
0.368
0.342
0.317
0.298
0.295
0.300
0.309
0.326
0.340
0.359
0.369
0.371
0.369
0.373
0.385
0.411
0.446
-5.5
-10.8
-21.4
-31.6
-41.6
-51.6
-61.2
-71.0
-78.5
-87.2
-97.7
-109.8
-124.7
-139.0
-153.3
-165.9
-175.7
175.3
167.6
160.7
152.0
142.4
133.3
123.2
113.3
103.3
94.5
0.047
0.063
0.127
0.201
0.277
0.352
0.447
0.509
0.677
0.729
0.767
0.810
0.874
0.999
1.065
1.126
1.128
1.138
1.112
1.132
1.274
1.659
2.561
2.679
2.919
2.495
2.220
23.531
20.507
17.437
15.756
14.451
13.705
12.855
12.281
12.026
11.566
11.206
10.799
10.722
10.807
9.101
8.207
7.642
7.198
6.860
5.846
5.230
3.865
2.913
2.369
1.496
1.561
0.919
FREQUENCY
(GHz)
S
11
S
21
S
12
S
22
K
MAG
2
(dB)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
NE71300
V
DS
= 2 V, I
D
= 10 mA
NE71300
TYPICAL SCATTERING PARAMETERS
1
Notes:
1. S-parameters include bond wires.
Gate:
Total 2 wire (s), 2 per bond pad, 0.0298" (756
μ
m) long each wire.
Drain: Total 739 wire(s), 2 per bond pad, 0.0291" (739
μ
m) long each wire.
Source:Total 4 wire (s), 2 per side, 0.0186" (472
μ
m) long each wire.
Wire:
0.0007" (17.8
μ
m) Diameter, Gold.
2. Gain Calculations:
|S
21
|
|S
12
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
Coordinates in Ohms
Frequency in GHz
(V
DS
= 2 V, I
D
= 10 mA)
20
10
5
4
3
2
1.5
1
.8
.6
.4
.2
-.2
-.4
-.6
-.8
-1
-1.5
-2
-3
-4
-5
-10
-20
0
20
10
1.5
.8
.6
.4
.2
5
S
22
4
3
2
1
S
11
0.5 GHz
S
11
26 GHz
0.5 GHz
S
22
26 GHz
90
270
180
225
315
135
45
0
0.50
1.00
1.50
2.00
2.50
3.00
0.10
0.05
0.15
S
12
0.5 GHz
S
12
26 GHz
S
21
0.5 GHz
S
21
26 GHz
相關(guān)PDF資料
PDF描述
NE71383B L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE71300-L L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE71300-M L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE71300-N L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE71300-N 制造商:NEC 制造商全稱:NEC 功能描述:L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE71383B 功能描述:MOSFET KU-K BAND MESFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NE720 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:High sensitivity & reliability.
NE720_05 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:High sensitivity & reliability.
NE720AZDC12V 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:High sensitivity & reliability.
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