- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363249 > NE68939-T1 (NEC Corp.) NPN SILICON EPITAXIAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | NE68939-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR |
| 中文描述： | NPN硅外延晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 27K |
| 代理商： | NE68939-T1 |
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
PART NUMBER
PACKAGE CODE
PARAMETERS
Collector Cutoff Current, V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current, V
EB
= 1 V, I
C
= 0
DC Current Gain, V
CE
= 3.6 V, I
C
= 100 mA
Output Power
Power Gain
NE68939
39
MIN
SYMBOLS
I
CBO
I
EBO
h
FE
P
-1
G
p
η
C
T
ON
UNITS
μ
A
μ
A
TYP
MAX
2.5
2.5
30
dBm
dB
24.5
8
6.5
Collector Efficiency
%
50
62
Maximum Device On Time
M
S
10.0
NPN SILICON EPITAXIAL TRANSISTOR
PRELIMINARY DATA SHEET
California Eastern Laboratories
FEATURES
OUTPUT POWER AT 1dB COMPRESSION POINT:
24.5 dBm TYP @F = 1.9 GH
Z
, V
CE
= 3.6 V, Class AB,
Duty 1/8
4 PIN MINI MOLD PACKAGE:
NE68939
NE68939
V
CE
= 3.6 V, f = 1.9 GH
Z
ICq = 2 mA (Class AB)
Duty 1/8
DESCRIPTION
The NE68939 is a low voltage, NPN Silicon Bipolar Transistor
for pulsed power applications. The device is designed to op-
erate from a 3.6 V supply, and deliver over 1/4 watt of power
output at frequencies up to 2.0 GH
Z
with a 1:8 duty cycle.
These characteristics make it an ideal device for TX driver
stage in a 1.9 GH
Z
digital cordless telephone (DECT or PHS).
The part is supplied in a SOT-143 (SC-61) 4-pin Mini-mold
package and is available on tape and reel.
The NE68939 transistors are manufactured to NEC's strin-
gent quality assurance standards to ensure highest reliability
and consistent superior performance.
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 39
2.8 -0.3
1.5 -0.1
+0.10
-0.05
(LEADS 2, 3, 4)
0.6 -0.05
0.16-0.06
5
5
0.8
1.1 -0.1
1
2
3
0 to 0.1
4
0.4
2.9
±
0.2
0.95
0.85
1.9
1) Collector
2) Emitter
3) Base
4) Emitter
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE69039 | NPN SILICON EPITAXIAL TRANSISTOR |
| NE69039-T1 | NPN SILICON EPITAXIAL TRANSISTOR |
| NE696M01 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE698M01 | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION |
| NE698M01-T1 | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE68939-T1-A | 功能描述:射頻雙極小信號晶體管 NPN Low Voltage RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE69039 | 制造商:CEL 制造商全稱:CEL 功能描述:NPN SILICON EPITAXIAL TRANSISTOR |
| NE69039-A | 功能描述:射頻雙極小信號晶體管 NPN Low Voltage RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE69039-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR |
| NE69039-T1-A | 功能描述:射頻雙極小信號晶體管 NPN Low Voltage RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。