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參數(shù)資料
| 型號： | NE69039-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR |
| 中文描述： | NPN硅外延晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 27K |
| 代理商： | NE69039-T1 |
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
PART NUMBER
PACKAGE CODE
PARAMETERS
Collector Cutoff Current, V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current, V
EB
= 1 V, I
C
= 0
DC Current Gain, V
CE
= 3.6 V, I
C
= 100 mA
Output Power
Power Gain
NE69039
39
MIN
SYMBOLS
I
CBO
I
EBO
h
FE
P
-1
G
P
η
C
T
ON
UNITS
μ
A
μ
A
TYP
MAX
2.5
2.5
30
dBm
dB
27.5
6.0
5.0
Collector Efficiency
%
50
72
Maximum Device On Time
M
S
10.0
NPN SILICON EPITAXIAL TRANSISTOR
PRELIMINARY DATA SHEET
California Eastern Laboratories
FEATURES
OUTPUT POWER AT 1dB COMPRESSION POINT:
27.5 dBm TYP @F = 1.9 GH
Z
, V
CE
= 3.6 V, Class AB,
Duty 1/8
4 PIN MINI MOLD PACKAGE:
NE69039
NE69039
V
CE
= 3.6 V, f = 1.9 GH
Z
ICq = 1 mA (Class AB)
Duty 1/8
DESCRIPTION
The NE69039 is a low voltage, NPN Silicon Bipolar Transistor
for pulsed power applications. The device is designed to op-
erate from a 3.6 V supply, and deliver over 1/2 watt of power
output at frequencies up to 2.0 GH
Z
with a 1:8 duty cycle. These
characteristics make it an ideal device for TX output stage in a
1.9 GH
Z
digital cordless telephone (DECT or PHS). The part
is supplied in a SOT-143 (SC-61) 4-pin Mini-mold package
and is available on tape and reel.
The NE69039 transistors are manufactured to NEC's stringent
quality assurance standards to ensure highest reliability and
consistent superior performance.
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 39
2.8 -0.3
1.5 -0.1
+0.10
-0.05
(LEADS 2, 3, 4)
0.6 -0.05
0.16-0.06
5
5
0.8
1.1 -0.1
1
2
3
0 to 0.1
4
0.4
2.9
±
0.2
0.95
0.85
1.9
1) Collector
2) Emitter
3) Base
4) Emitter
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE69039-T1-A | 功能描述:射頻雙極小信號晶體管 NPN Low Voltage RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE696M01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE696M01-A | 功能描述:射頻雙極小信號晶體管 NPN Silicon Amp Oscillatr Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE696M01-T1 | 功能描述:射頻雙極小信號晶體管 DISC BY CEL 1/02 M01 NPN HIGH FREQ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE696M01-T1-A | 功能描述:射頻雙極小信號晶體管 NPN Silicon Amp Oscillatr Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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