參數(shù)資料
型號(hào)： NE68139R-T1
廠商： NEC Corp.
英文描述： NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
中文描述： 鄰舍NPN硅高頻晶體管
文件頁數(shù)： 1/20頁
文件大?。?/td> 218K
代理商： NE68139R-T1
DESCRIPTION
from this datasheet are not
The following part numbers
NEC's NE681 series of NPN epitaxial silicon transistors are
designed for low noise, high gain, low cost amplifier applica-
tions. Both the chip and micro-x versions are suitable for
amplifier applications up to 4 GHz. The NE681 die is also
available in six different low cost plastic surface mount pack-
age styles. NE681's unique device characteristics allow you to
use a single matching point to simultaneously achieve both low
noise and high gain.
The following part numbers
The following part numbers
The following part numbers
The following part numbers
recommended for new design.
recommended for new design.
recommended for new design.
recommended for new design.
recommended for new design.
Please call sales office for
Please call sales office for
Please call sales office for
Please call sales office for
Please call sales office for
0.5 1.0 2.0 3.0
1.0
2.0
3.0
0
10
20
MSG
G
A
NF
V
CE
= 3 V, I
C
= 5 mA
MAG
NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
NE681
SERIES
FEATURES
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 8 GHz
LOW NOISE FIGURE:
1.2 dB at 1 GHz
HIGH ASSOCIATED GAIN:
15 dB at 1 GHz
12 dB at 2 GHz
LOW COST
Frequency, f (GHz)
A
a
G
M
18 (SOT 343 STYLE)
19 (3 PIN ULTRA
SUPER MINI MOLD)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
33 (SOT 23 STYLE)
E
B
NOISE FIGURE, GAIN MSG
AND MAG vs. FREQUENCY
30 (SOT 323 STYLE)
相關(guān)PDF資料
PDF描述
NE681M23 NPN SILICON TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE68139R-T1-A 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE68139-T1 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE68139-T1-A 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE68139-T1-R37-A 制造商:CALIFORNIA EASTERN LABORATORIES 功能描述:NE68139 Series 10 V 9 GHz NPN Silicon High Frequency Transistor - SOT-23-3
NE681M03 功能描述:射頻雙極小信號(hào)晶體管 USE 551-NE681M03-A RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
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