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參數(shù)資料
| 型號： | NE680M03 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON TRANSISTOR |
| 中文描述： | NPN硅晶體管 |
| 文件頁數(shù)： | 7/19頁 |
| 文件大小： | 246K |
| 代理商： | NE680M03 |
NE680 SERIES
100
400
800
1000
1500
2000
2500
3000
.905
.726
.505
.428
.302
.223
.172
.149
-15.3
-52.5
-87.4
-100.0
-126.3
-149.5
-177.0
150.7
9.292
7.492
5.221
4.439
3.211
2.520
2.100
1.831
165.2
131.0
100.5
89.5
67.8
50.2
34.7
20.4
.018
.057
.083
.093
.116
.138
.163
.191
81.0
60.9
46.2
42.5
36.3
33.0
28.4
22.6
.968
.848
.684
.638
.582
.551
.532
.507
-9.4
-28.7
-42.7
-46.9
-54.4
-61.4
-67.6
-75.5
V
CE
= 2.5 V, I
C
= 3 mA
100
400
800
1000
1500
2000
2500
3000
.849
.613
.386
.317
.215
.149
.103
.092
-18.0
-60.8
-93.9
-105.5
-128.5
-149.7
-178.6
143.3
13.629
9.820
6.206
5.157
3.615
2.786
2.298
1.989
162.0
123.1
93.8
83.9
64.1
47.9
33.5
20.1
.018
.050
.067
.079
.102
.127
.156
.185
85.2
60.7
49.2
47.3
43.3
39.9
34.0
28.9
.949
.789
.639
.607
.575
.563
.552
.537
-9.6
-29.4
-39.2
-42.2
-49.1
-55.7
-62.3
-70.2
V
CE
= 6 V, I
C
= 5 mA
V
CE
= 2.5 V, I
C
= 1 mA
FREQUENCY
(MHz)
100
400
800
1000
1500
2000
2500
3000
S
11
S
21
S
12
S
22
K
MAG
1
(dB)
23.1
17.0
14.0
13.0
11.5
10.5
7.9
6.2
MAG
.971
.905
.774
.706
.564
.453
.364
.303
ANG
-9.9
-34.9
-65.1
-78.0
-106.1
-130.7
-156.6
174.5
MAG
3.456
3.207
2.751
2.512
2.043
1.721
1.497
1.355
ANG
169.4
145.8
117.3
105.2
80.0
59.1
40.9
24.5
MAG
.017
.064
.110
.126
.146
.155
.162
.176
ANG
84.6
66.7
46.1
38.1
25.4
17.5
13.5
9.9
MAG
0.996
0.961
0.869
0.829
0.751
0.695
0.658
0.624
ANG
-6.2
-20.2
-36.6
-43.1
-54.7
-63.8
-71.6
-79.9
NE68019
0.03
0.17
0.37
0.46
0.68
0.90
1.08
1.19
0.10
0.34
0.63
0.75
0.95
1.08
1.13
1.15
27.1
21.2
18.0
16.8
14.4
10.9
8.9
7.5
0.11
0.45
0.79
0.87
1.02
1.09
1.10
1.10
28.8
22.9
19.7
18.1
14.6
11.6
9.80
8.40
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
(T
A
= 25
°
C)
Coordinates in Ohms
Frequency in GHz
(V
CE
= 2.5 V, I
C
= 1 mA)
20
10
5
4
3
2
1.5
1
.8
.6
.4
.2
-.2
-.4
-.6
-.8
-1
-1.5
-2
-3
-4
-5
-10
-20
0
20
10
1.5
.8
.6
.4
.2
5
4
3
2
1
S
22
0.1 GHz
S
11
0.1 GHz
S
22
3 GHz
S
11
3 GHz
90
270
180
225
315
135
45
0
2.5
0.1
S
12
0.1 GHz
S
21
3 GHz
S
21
0.1 GHz
S
12
3 GHz
Note:
1.Gain Calculations:
|S
21
|
|S
12
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE681 | 制造商:NEC 制造商全稱:NEC 功能描述:NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68100 | 制造商:NEC 制造商全稱:NEC 功能描述:NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68118 | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68118-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68118-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
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