參數(shù)資料
型號: NE680M03
廠商: NEC Corp.
英文描述: NPN SILICON TRANSISTOR
中文描述: NPN硅晶體管
文件頁數(shù): 1/19頁
文件大?。?/td> 246K
代理商: NE680M03
Both the chip and micro-x versions are suitable for applications
up to 6 GHz. The NE680 die is also available in six different low
cost plastic surface mount package styles. The NE680's high
f
T
makes it ideal for low voltage/low current applications, down
to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is
35 mA. For higher current applications see the NE681 series.
recommended for new design.
NOISE FIGURE & ASSOCIATED GAIN
vs. FREQUENCY
recommended for new design.
recommended for new design.
recommended for new design.
NE68035
recommended for new design.
Please call sales office for
25
6V, 5 mA
3V, 5 mA
Please call sales office for
Please call sales office for
Please call sales office for
Please call sales office for
NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
NE680
SERIES
NEC's NE680 series of NPN epitaxial silicon transistors is
designed for low noise, high gain and low cost applications.
300 500 1000 2000 3000
.5
1.0
1.5
2.0
2.5
20
15
10
5
N
A
A
Frequency, f (GHz)
00 (CHIP)
35 (MICRO-X)
E
B
DESCRIPTION
FEATURES
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 10 GHz
LOW NOISE FIGURE:
1.7 dB at 2 GHz
2.6 dB at 4 GHz
HIGH ASSOCIATED GAIN:
12.5 dB at 2 GHz
8.0 dB at 4 GHz
EXCELLENT LOW VOLTAGE
LOW CURRENT PERFORMANCE
18 (SOT 343 STYLE)
19 (3 PIN ULTRA
SUPER MINI MOLD)
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
California Eastern Laboratories
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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