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參數(shù)資料
| 型號： | NE680M03 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON TRANSISTOR |
| 中文描述： | NPN硅晶體管 |
| 文件頁數(shù)： | 10/19頁 |
| 文件大?。?/td> | 246K |
| 代理商： | NE680M03 |
NE68035
V
CE
= 6 V, I
C
= 5 mA
FREQUENCY
(MHz)
100
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
V
CE
= 6 V, I
C
= 10 mA
S
11
S
21
S
12
S
22
K
MAG
1
(dB)
31.4
24.6
21.4
19.3
17.6
14.9
13.1
11.8
11.0
10.3
9.9
MAG
.869
.682
.518
.440
.414
.400
.392
.385
.382
.376
.372
ANG
-13.4
-69.0
-111.7
-137.9
-156.8
-171.6
175.7
164.5
155.2
146.2
137.8
MAG
12.862
9.959
6.550
4.709
3.658
3.004
2.527
2.182
1.973
1.733
1.575
ANG
167.5
128.3
100.6
83.9
70.8
59.6
49.3
39.8
30.9
22.3
14.0
MAG
.009
.034
.047
.056
.064
.073
.083
.093
.103
.114
.126
ANG
83.8
55.9
45.2
43.5
43.2
43.2
42.8
41.9
40.4
38.9
37.0
MAG
.989
.834
.706
.658
.642
.637
.639
.646
.654
.664
.675
ANG
-5.8
-22.2
-30.0
-35.4
-41.5
-48.0
-55.0
-62.2
-69.4
-76.7
-83.7
0.07
0.36
0.64
0.85
0.98
1.04
1.08
1.10
1.08
1.07
1.03
100
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
.766
.534
.434
.401
.397
.394
.396
.393
.394
.392
.391
-23.2
-96.2
-138.0
-160.0
-174.9
173.1
162.7
153.2
145.2
137.3
129.4
20.629
12.610
7.284
5.035
3.852
3.133
2.626
2.261
2.000
1.785
1.619
162.3
115.8
91.5
77.3
65.7
55.4
45.8
36.7
28.2
19.8
11.7
.008
.027
.037
.046
.057
.068
.079
.091
.103
.115
.128
75.9
53.3
50.8
52.5
53.2
52.7
51.7
50.0
47.6
45.3
42.8
.972
.746
.649
.625
.619
.622
.627
.637
.648
.660
.672
-8.0
-22.7
-27.2
-32.3
-38.6
-45.5
-52.7
-60.1
-67.5
-75.0
-82.1
0.16
0.52
0.84
1.02
1.07
1.09
1.09
1.07
1.04
1.01
0.97
33.9
26.8
23.0
19.6
16.6
14.8
13.4
12.3
11.7
11.3
11.0
100
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
.593
.463
.443
.436
.443
.448
.453
.454
.459
.460
.461
-45.9
-132.6
-163.8
-178.8
170.3
160.8
152.3
144.1
136.7
129.2
121.6
25.683
11.309
6.056
4.124
3.140
2.547
2.132
1.832
1.618
1.441
1.304
152.5
103.7
83.9
71.6
60.8
50.9
41.5
32.5
24.0
15.7
7.7
.008
.019
.029
.039
.051
.062
.074
.087
.099
.112
.127
73.6
54.1
58.6
61.6
62.0
61.3
60.0
58.0
55.4
52.9
50.2
.933
.713
.672
.664
.665
.670
.677
.687
.697
.708
.718
-9.6
-18.0
-22.6
-29.1
-36.5
-44.1
-52.0
-59.9
-67.8
-75.7
-83.1
0.20
0.80
1.09
1.21
1.20
1.18
1.13
1.09
1.03
0.98
0.92
35.3
27.7
21.4
17.5
15.2
13.6
12.4
11.4
11.1
11.1
10.1
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
(T
A
= 25
°
C)
V
CE
= 6 V, I
C
= 20 mA
NE680 SERIES
Coordinates in Ohms
Frequency in GHz
(V
CE
= 6 V, I
C
= 5 mA)
20
10
5
4
3
2
1.5
1
.8
.6
.4
.2
-.2
-.4
-.6
-.8
-1
-1.5
-2
-3
-4
-5
-10
-20
0
20
10
1.5
.8
.6
.4
.2
5
4
3
2
1
S
22
0.1 GHz
S
11
0.1 GHz
S
11
5 GHz
S
22
5 GHz
90
270
180
225
315
135
45
0
10
5
.05
.10
S
12
0.1 GHz
S
21
0.1 GHz
S
21
5 GHz
S
12
5 GHz
Note:
1.Gain Calculations:
|S
21
|
|S
12
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NE681 | 制造商:NEC 制造商全稱:NEC 功能描述:NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
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| NE68118 | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68118-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68118-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
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