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參數(shù)資料
| 型號(hào)： | NE662M16-T3 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | NPN硅高頻晶體管 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 93K |
| 代理商： | NE662M16-T3 |
NE662M04
NPN SILICON HIGH
FREQUENCY TRANSISTOR
M04
HIGH GAIN BANDWIDTH:
f
T
= 25 GHz
LOW NOISE FIGURE:
NF = 1.1 dB at 2 GHz
HIGH MAXIMUM STABLE GAIN:
20 dB at f = 2 GHz
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of just 0.59 mm
Flat Lead Style for better RF performance
FEATURES
DESCRIPTION
The NE662M04 is fabricated using NEC's UHS0 25 GHz f
T
wafer process. With a typical transition frequency of 25 GHz
the NE662M04 is usable in applications from 100 MHz to 10
GHz. The NE662M04 provides excellent low voltage/low cur-
rent performance.
NEC's new low profile/flat lead style "M04" package is ideal for
today's portable wireless applications. The NE662M04 is an
ideal choice for LNA and oscillator requirements in all mobile
communication systems.
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
NE662M04
2SC5508
M04
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
I
EBO
h
FE
f
T
MAG
MSG
|S
21E
|
2
NF
P
1dB
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain
2
at V
CE
= 2 V, I
C
= 5 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
Maximum Available Power Gain
4
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Maximum Stable Gain
5
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, Z
IN
= Z
OPT
Output Power at 1 dB compression point at
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Third Order Intercept Point at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
Feedback Capacitance
3
at V
CB
= 2 V, I
C
= 0, f = 1 MHz
nA
nA
200
200
100
50
20
70
25
20
20
17
1.1
GHz
dB
dB
dB
dB
14
1.5
dBm
11
22
0.18
IP
3
Cre
pF
0.24
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
D
R
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
S
21
S
12
(
K-
)
4. MAG =
5. MSG =S
21
S
12
(K
2
-1)
California Eastern Laboratories
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參數(shù)描述 |
|---|---|
| NE662M16-T3-A | 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE662MO4-T2 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| NE663M04 | 功能描述:射頻雙極小信號(hào)晶體管 USE 551-NE663M04-A RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE663M04-A | 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE663M04-EVPW08 | 功能描述:射頻開發(fā)工具 For NE663M04-A Power at 800 MHz RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評(píng)估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
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