參數(shù)資料
型號(hào)： NE5510279A-T1
廠商： NEC Corp.
英文描述： 3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
中文描述： 3.5V的操作硅射頻功率MOSFET的GSM1800系統(tǒng)輸電功放
文件頁(yè)數(shù)： 4/5頁(yè)
文件大?。?/td> 39K
代理商： NE5510279A-T1
NE5510279A
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
MAG
0.889
0.872
0.871
0.871
0.873
0.880
0.884
0.897
0.905
0.919
0.930
0.923
0.919
0.918
0.918
0.920
0.918
0.927
0.922
0.923
0.928
0.926
0.929
0.925
0.928
0.933
0.930
0.929
0.931
0.933
ANG
-149.7
-165.4
-170.9
-173.7
-175.6
-176.9
-177.9
-179.1
-179.9
178.1
175.9
174.2
172.9
171.8
170.6
168.9
167.5
166.2
164.1
162.6
159.9
158.6
156.6
154.5
152.2
150.4
148.4
146.2
144.4
142.6
MAG
8.66
4.41
2.91
2.13
1.69
1.37
1.17
0.99
0.87
0.77
0.69
0.60
0.54
0.48
0.44
0.41
0.36
0.35
0.31
0.30
0.26
0.25
0.22
0.22
0.20
0.20
0.16
0.17
0.16
0.15
ANG
99.8
87.5
82.0
76.1
71.5
67.7
63.9
60.5
56.3
53.8
48.8
46.9
42.6
41.0
37.6
36.7
33.6
30.9
28.2
27.8
25.2
23.2
20.0
18.0
18.1
17.2
15.0
11.1
11.6
10.0
MAG
0.019
0.020
0.020
0.019
0.019
0.018
0.016
0.016
0.014
0.014
0.012
0.012
0.010
0.010
0.011
0.008
0.008
0.009
0.007
0.007
0.007
0.006
0.008
0.009
0.007
0.009
0.011
0.013
0.013
0.014
ANG
14.6
3.4
-1.8
-4.1
-9.5
-11.8
-10.6
-10.2
-15.0
-7.8
-13.7
-11.0
-10.5
-4.7
-8.0
-5.5
4.3
12.5
20.9
32.4
48.5
36.8
50.0
45.1
61.4
56.3
70.0
59.4
74.0
67.5
MAG
0.854
0.861
0.875
0.869
0.886
0.886
0.893
0.898
0.914
0.928
0.938
0.927
0.923
0.922
0.924
0.927
0.922
0.935
0.932
0.942
0.928
0.938
0.935
0.945
0.941
0.938
0.933
0.952
0.937
0.950
ANG
-173.8
-177.7
-178.6
-179.6
179.7
179.2
178.9
178.0
177.8
176.0
174.8
172.9
171.8
170.6
170.1
168.7
167.9
165.9
164.9
163.0
161.8
160.0
157.6
156.2
154.5
152.5
150.3
148.1
146.9
145.0
(dB)
26.6
23.4
21.6
20.5
19.5
18.8
18.6
17.9
17.9
17.4
17.6
17.0
14.1
12.2
11.7
10.4
8.5
10.3
7.9
8.6
6.2
6.3
5.4
6.2
4.8
5.2
2.5
5.4
3.2
4.3
-0.50
-0.36
-0.25
-0.01
0.04
0.22
0.40
0.40
0.41
0.16
0.11
0.59
1.29
1.62
1.53
2.46
3.27
1.95
3.67
3.08
4.46
4.89
4.01
3.01
4.77
3.43
4.13
2.01
3.01
2.10
NE5510279A
V
D
= 3.5 V, I
DS
= 400 mA
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
(
K
–
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
相關(guān)PDF資料
PDF描述
NE5517 Dual Operational Transconductance Amplifier(雙運(yùn)算跨導(dǎo)放大器)
NE5517A Dual Operational Transconductance Amplifier(雙運(yùn)算跨導(dǎo)放大器)
NE5520279A NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
NE5520279A-T1 NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
NE5532AI DUAL LOW-NOISE OPERATIONAL AMPLIFIERS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE5510279A-T1-A 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR LDMOS
NE5511279A 功能描述:射頻MOSFET電源晶體管 RO 551-NE5511279A-A RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
NE5511279A-A 功能描述:射頻MOSFET電源晶體管 UHF Band RF Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
NE5511279A-T1 制造商:California Eastern Laboratories (CEL) 功能描述:Trans RF MOSFET N-CH 20V 3A 4-Pin Case 79A T/R
NE5511279A-T1A 制造商:California Eastern Laboratories (CEL) 功能描述:Trans RF MOSFET N-CH 20V 3A 4-Pin Case 79A T/R 制造商:California Eastern Laboratories 功能描述:Trans RF MOSFET N-CH 20V 3A 4-Pin Case 79A T/R
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*