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參數(shù)資料
| 型號： | NE5510279A-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | 3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS |
| 中文描述： | 3.5V的操作硅射頻功率MOSFET的GSM1800系統(tǒng)輸電功放 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 39K |
| 代理商： | NE5510279A-T1 |
3.5 V OPERATION SILICON RF
POWER MOSFET FOR GSM1800
TRANSMISSION AMPLIFIERS
California Eastern Laboratories
FEATURES
HIGH OUTPUT POWER:
32 dBm TYP at V
DS
= 3.5 V, I
DQ
= 400 mA,
f = 1.8 GHz, P
IN
= 25 dBm
HIGH POWER ADDED EFFICIENCY:
45% TYP at V
DS
= 3.5 V, I
DQ
= 400 mA,
f = 1.8 GHz, P
IN
= 25 dBm
HIGH LINEAR GAIN:
10 dB TYP at V
DS
= 3.5 V, I
DQ
= 400 mA,
f = 1.8 GHz, P
IN
= 10 dBm
SURFACE MOUNT PACKAGE:
5.7
x
5.7
x
1.1 mm MAX
SINGLE SUPPLY:
2.8 to 6.0 V
NE5510279A
DESCRIPTION
The NE5510279A is an N-Channel silicon power MOSFET
specially designed as the transmission power amplifier for
3.5 V GSM1800 handsets. Dies are manufactured using NEC's
NEWMOS technology (NEC's 0.6
μ
m WSi gate lateral
MOSFET) and housed in a surface mount package. This de-
vice can deliver 32 dBm output power with 45% power added
efficiency at 1.8 GHz under the 3.5 V supply voltage, or can
deliver 31 dBm output power at 2.8 V by varying the gate
voltage as a power control function.
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
DIGITAL CELLULAR PHONES
OTHERS
APPLICATIONS
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
PART NUMBER
PACKAGE OUTLINE
CHARACTERISTICS
Gate to Source Leakage Current
NE5510279A
79A
SYMBOLS
I
GSS
UNITS
nA
MIN
-
TYP
-
MAX
100
TEST CONDITIONS
V
GSS
= 6.0 V
I
DSS
Drain to Source Leakage Current
nA
-
-
100
V
DSS
= 8.5 V
V
TH
Gate Threshold Voltage
V
1.0
1.35
2.0
V
DS
= 4.8 V, I
DS
= 1 mA
gm
Transconductance
S
-
1.50
-
V
DS
= 4.8 V, I
DS
1 = 500 mA, I
DS
2 = 700 mA
R
DS(ON)
Drain to Source On Resistance
-
-
0.27
-
V
GS
= 6.0 V, V
DS
= 0.5 V
BV
DSS
Drain to Source Breakdown Voltage
V
20
24
-
I
DSS
= 10 A
Source
Gate
0
±
Drain
4.2 Max
5
4
0
±
5.7 Max
0.4
±
0.15
Source
Gate
Drain
1
1
3.6
±
0.2
0.8 Max
0
±
0
±
1.5
±
0.2
Bottom View
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE5510279A-T1-A | 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR LDMOS |
| NE5511279A | 功能描述:射頻MOSFET電源晶體管 RO 551-NE5511279A-A RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| NE5511279A-A | 功能描述:射頻MOSFET電源晶體管 UHF Band RF Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| NE5511279A-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans RF MOSFET N-CH 20V 3A 4-Pin Case 79A T/R |
| NE5511279A-T1A | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans RF MOSFET N-CH 20V 3A 4-Pin Case 79A T/R 制造商:California Eastern Laboratories 功能描述:Trans RF MOSFET N-CH 20V 3A 4-Pin Case 79A T/R |
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