參數(shù)資料
型號(hào)： NE5510279A-T1
廠商： NEC Corp.
英文描述： 3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
中文描述： 3.5V的操作硅射頻功率MOSFET的GSM1800系統(tǒng)輸電功放
文件頁(yè)數(shù)： 3/5頁(yè)
文件大小： 39K
代理商： NE5510279A-T1
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
NE5510279A
O
O
O
O
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY AND POWER ADDED
EFFICIENCY vs. INPUT POWER
Input Power, P
IN
(dBm)
D
D
D
D
DRAIN CURRENT vs. GATE TO
SOURCE VOLTAGE
Gate to Source Voltage, V
GS
(V)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, V
DS
(V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
2
4
6
8
10
12
14
16
V
GS
MAX = 10 V
Step = 1.0 V
10000
1000
100
10
1
1.0
1.5
2.0
2.5
3.0
V
DS
= 3.5 V
P
O
= 32.0 dBm
P
OUT
I
D
η
η
ADD
2500
2000
1500
1000
500
0
100
50
0
35
30
25
20
15
10
5
10
15
20
25
30
V
DS
= 3.5 V
I
DQ
= 400 mA
f = 1.8 GHz
D
D
E
η
,
η
A
Gate to Source Voltage, V
GS
(V)
P
OUT
I
DS
η
η
ADD
2500
2000
1500
1000
500
0
100
50
0
33
32
31
30
29
28
0.0
1.0
2.0
3.0
4.0
P
MAX
= 32.6 dBm
APC
V
DS
= 3.5 V
f = 1.8 GHz
P
IN
= 25 dBm
D
D
E
η
,
η
A
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY
AND POWER ADDED EFFICIENCY vs.
GATE TO SOURCE VOLTAGE
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY AND POWER ADDED
EFFICIENCY vs. INPUT POWER
O
O
Input Power, P
IN
(dBm)
D
D
E
η
,
η
A
P
OUT
I
D
η
η
ADD
2500
2000
1500
1000
500
0
100
50
0
35
30
25
20
15
5
10
15
20
30
25
10
P
MAX
= 30.6 dBm
V
DS
= 2.8 V
I
DQ
= 400 mA
f = 1.8 GHz
P
OUT
I
DS
η
η
ADD
32
31
30
29
28
27
0.0
1.0
2.0
3.0
4.0
APC
P
O
= 31.1 dBm
2500
2000
1500
1000
500
0
100
50
0
V
DS
= 2.8 V
f = 1.8 GHz
P
IN
= 25 dBm
O
O
Gate to Source Voltage, V
GS
(V)
D
D
E
η
,
η
A
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY
AND POWER ADDED EFFICIENCY vs.
GATE TO SOURCE VOLTAGE
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參數(shù)描述
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