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參數(shù)資料
| 型號： | NE5520279A |
| 廠商： | NEC Corp. |
| 英文描述： | NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET |
| 中文描述： | 鄰舍3.2五，2瓦報 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 166K |
| 代理商： | NE5520279A |
NEC'
S
3.2 V, 2 W, L&S BAND
MEDIUM POWER SILICON LD-MOSFET
FEATURES
LOW COST PLASTIC SURFACE MOUNT PACKAGE:
5.7
x
5.7
x
1.1 mm MAX
HIGH OUTPUT POWER:
+32 dBm TYP
HIGH LINEAR GAIN:
10 dB TYP @ 1.8 GHz
HIGH POWER ADDED EFFICIENCY:
45% TYP at 1.8 GHz
SINGLE SUPPLY:
2.8 to 6.0 V
NE5520279A
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
Notes:
1.
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2.
P
in
= 5 dBm
DESCRIPTION
NEC's NE5520279A is an N-Channel silicon power laterally
dif used MOSFET spe cial y designed as the power ampli
T
er
for mobile and
T
xed wireless applications. Die are man u
fac ured us ng NEC's NEWMOS tech nol o gy (NEC's 0.6
μ
m
WSi gate lat er al MOSFET) and housed in a surface mount
pack age.
DIGITAL CELLULAR PHONES:
3.2 V DCS1800 Handsets
0.7-2.5 GHz FIXED WIRELESS ACCESS
W-LAN
SHORT RANGE WIRELESS
RETAIL BUSI NESS RADIO
SPECIAL MOBILE RADIO
APPLICATIONS
California Eastern Laboratories
0
0
(Bottom View)
3.6±0.2
1.5±0.2
0.8 MAX.
1
Source
Gate
Drain
0.4±0.15
5.7 MAX.
5
0
0
4
4.2 MAX.
Source
Gate
Drain
A
0
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER NE5520279A
PACKAGE OUTLINE 79A
SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS
F
P
OUT
Output Power dBm 30.5 32.0
G
L
Lin ear Gain dB 10
η
ADD
Pow er Added Ef
T
ciency % 40 45
C
D
Drain Current mA 800
I
GSS
Gate-to-Source Leakage Current nA 100 V
GS
= 5.0 V
I
DSS
Saturated Drain Current nA 100 V
DS
= 6.0 V
(Zero Gate Volt age Drain Current)
V
TH
Gate Threshold Voltage V 1.0 1.4 1.9 V
DS
= 3.5 V, I
DS =
1 mA
E
m
Transconductance S 1.3 V
DS
= 3.5 V, I
DS =
700 mA
BV
DSS
Drain-to-Source Breakdown Voltage V 15 18 I
DSS
= 10
μ
A
R
TH
Thermal Resistance
°
C/W 8 Channel-to-Case
f = 1.8 GHz, V
DS
= 3.2 V,
I
DSQ
= 700 mA, P
IN
= 25 dBm, except
P
IN
= 5 dBm for Linear Gain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE5520279A-T1 | NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET |
| NE5532AI | DUAL LOW-NOISE OPERATIONAL AMPLIFIERS |
| NE5532I | DUAL LOW-NOISE OPERATIONAL AMPLIFIERS |
| NE5532 | Dual Operational Amplifier |
| NE5532D | Dual Operational Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE5520279A-A | 功能描述:射頻MOSFET電源晶體管 L/S Band Med Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| NE5520279A-EVPW04 | 功能描述:射頻開發(fā)工具 Silicon Medium Pwr LDMOS RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| NE5520279A-EVPW09 | 功能描述:射頻開發(fā)工具 For NE5520279A-A Power at 900 MHz RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| NE5520279A-EVPW24 | 功能描述:射頻開發(fā)工具 For NE5520279A-A Power at 2.4 GHz RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| NE5520279A-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans RF MOSFET N-CH 15V 0.6A 4-Pin Case 79A T/R |
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